US20060163677A1 - Methods of forming a semiconductor device having a metal gate electrode and associated devices - Google Patents

Methods of forming a semiconductor device having a metal gate electrode and associated devices Download PDF

Info

Publication number
US20060163677A1
US20060163677A1 US11/386,644 US38664406A US2006163677A1 US 20060163677 A1 US20060163677 A1 US 20060163677A1 US 38664406 A US38664406 A US 38664406A US 2006163677 A1 US2006163677 A1 US 2006163677A1
Authority
US
United States
Prior art keywords
pattern
gate
metal
layer
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/386,644
Inventor
Seong-Jun Heo
Sun-pil Youn
Sung-man Kim
Si-Young Choi
Gil-heyun Choi
Ja-hum Ku
Chang-won Lee
Jong-Myeong Lee
Kwon-Sun Ryu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to US11/386,644 priority Critical patent/US20060163677A1/en
Publication of US20060163677A1 publication Critical patent/US20060163677A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4941—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's

Definitions

  • the present invention relates to methods of forming semiconductor devices. More particularly, the present invention relates to methods of forming semiconductor devices having a metal gate electrode.
  • FIG. 1 is a cross-sectional diagram of a semiconductor device having a metal gate electrode according to the prior art. Referring to FIG.
  • a thermal treatment process can be performed in an oxygen environment.
  • the oxide layer “O” may increase resistance between the metal gate layer 9 and the gate polysilicon layer 5 .
  • the increased resistance attributed to the oxide layer may result in one or more of an RC (time constant) delay, a lower operational speed and reliability in a semiconductor device.
  • Embodiments of the invention provide methods of forming a semiconductor device that can inhibit and/or prevent oxide formation between a metal gate layer and a gate polysilicon layer in a gate pattern.
  • Certain embodiments of the invention are directed to methods that include forming an oxidation barrier layer covering at least a portion of a sidewall of a metal gate layer.
  • the method can include: sequentially forming a gate insulator, a gate polysilicon layer and a metal-containing layer on a semiconductor substrate.
  • the metal-containing layer and the gate polysilicon layer can be (sequentially) patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate (comprising a metal containing) pattern.
  • the method can include forming an oxidation barrier layer to cover at least a portion of a sidewall of the metal-containing pattern.
  • the oxidation barrier layer can be formed by chemical vapor deposition (CVD) and/or an atomic layer deposition (ALD).
  • the oxidation barrier layer can be deposited on sidewalls of the metal-containing layer with a greater thickness than on surfaces of other layers due to a difference of chemical properties in the material of the other layers, such as nucleation rate.
  • the oxidation barrier layer may comprise at least one of a metal, an oxide, a nitride or an oxynitride of the metal.
  • the metal can be selected from the group consisting of aluminum (Al), tantalum (Ta), titanium (Ti), hafnium (Hf) and gold (Au).
  • the oxidation barrier layer may be formed by selectively depositing a metal layer onto the sidewall(s) of the metal-gate pattern and then oxidizing or nitrifying the deposited metal layer.
  • the oxidation barrier layer may comprise and/or be formed of aluminum oxide (Al 2 O 3 ).
  • an aluminum layer can be formed by using a CVD method and by supplying methylpyrrolidine alane (MPA) as a source gas and argon (Ar) of 100 sccm as a carrier gas at a temperature of between about 135 ⁇ 145° C. and at a pressure of between about 0.1 ⁇ 1.1 Torr, and the aluminum layer can be oxidized under an oxygen-enriched environment or ambience.
  • MPA methylpyrrolidine alane
  • Ar argon
  • the metal-containing layer can be formed of a barrier metal layer and a metal gate layer that are sequentially stacked.
  • the gate pattern can comprise a gate polysilicon pattern, a barrier metal pattern and a metal gate pattern that are sequentially stacked.
  • the metal gate layer can comprise tungsten.
  • the barrier metal layer can comprise tungsten nitride (WN) and/or titanium nitride (TiN).
  • the oxidation barrier layer may be selectively formed to cover substantially only the metal gate pattern.
  • the methods can include forming a capping layer on the metal-containing layer.
  • the capping layer can be patterned when the metal-containing layer and the gate polysilicon layer are sequentially patterned, thereby forming a gate pattern comprising a gate polysilicon pattern, a metal-containing pattern and a capping pattern that are sequentially stacked.
  • a thermal treating process may be subsequently performed with respect to the semiconductor substrate having the gate pattern with the oxidation barrier layer under an oxygen-enriched environment or ambience.
  • the thermal treating process under the oxygen environment may comprise supplying nitrogen as a carrier gas and supplying oxygen and hydrogen at a temperature of between about 750 ⁇ 950° C. with a ratio of oxygen/hydrogen of between about 0.5 ⁇ 1.3.
  • the oxidation barrier layer can inhibit oxygen penetration into the metal-containing layer so that there is a reduced and/or no formation of a conventional oxide layer between the gate polysilicon pattern and the metal-containing pattern.
  • Still other embodiments are directed to methods of forming an integrated circuit device having a metal gate electrode.
  • the methods include: (a) forming a stacked gate pattern onto a target substrate, the gate pattern comprising a metal-gate pattern with opposing first and second surfaces and at least one sidewall; and (b) covering at least a portion of the at least one sidewall of the metal-gate pattern with an oxidation barrier layer.
  • the covering of the at least one sidewall of the metal-gate pattern comprises conformably covering substantially the entire outer surface of the sidewall(s) of the metal-gate pattern with the oxidation barrier layer, and, as desired also covering the sidewalls of a barrier metal layer abutting the metal-gate pattern.
  • the gate pattern can be formed so that it is substantially devoid of the oxidation barrier layer proximate to a sidewall of a respective gate polysilicon pattern and a capping pattern.
  • the method can include thermally treating the gate pattern in an oxygen-enriched environment and inhibiting an oxide layer from forming between the metal-barrier layer and the gate polysilicon layer based on the configuration of the oxidation barrier layer.
  • the devices include: (a) a substrate; (b) a gate insulation layer disposed over the substrate; (c) a plurality of spaced apart first gate patterns stacked on the gate insulation layer above the substrate; (d) a plurality of corresponding spaced apart metal barrier patterns, a respective one stacked on each of the first gate patterns above the gate insulation layer, the metal barrier patterns having at least one upwardly extending sidewall; (e) a plurality of corresponding second metal gate patterns, a respective one stacked on each of the metal barrier patterns above the first gate layer, the second metal gate patterns having at least one upwardly extending sidewall; (f) a plurality of corresponding capping patterns, a respective one stacked on each of the metal gate patterns above the metal barrier layer; and (g) an oxidation barrier layer conformably disposed over the metal barrier pattern sidewalls and the metal gate pattern sidewalls and being substantially absent on sidewalls of the first gate patterns and the sidewall
  • FIG. 1 is a cross-sectional diagram of a prior art semiconductor device having a metal gate electrode according to a conventional technology.
  • FIGS. 2A through 2C are cross-sectional diagrams sequentially illustrating exemplary operations and/or features for forming a semiconductor device having a metal gate electrode according to embodiments of the present invention.
  • relative terms such as “beneath”, may be used herein to describe one element's relationship to another elements as illustrated in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” other elements would then be oriented “above” the other elements. The exemplary term “below”, can therefore, encompasses both an orientation of above and below.
  • first and second may be used herein to describe various regions, layers and/or sections, these regions, layers and/or sections should not be limited by these terms. These terms are used to distinguish one region, layer or section from another region, layer or section. Thus, a first region, layer or section discussed below could be termed a second region, layer or section, and similarly, a second without departing from the teachings of the present invention. Like numbers refer to like elements throughout.
  • the present invention is directed to integrated circuits and can include structures formed on other substrates.
  • FIGS. 2A through 2C are cross-sectional diagrams sequentially illustrating exemplary operations and/or features of forming a semiconductor device having a metal gate electrode according to embodiments of the present invention.
  • a gate insulator 110 , a gate polysilicon layer 120 , a barrier metal layer 130 , a metal gate layer 140 and a capping layer 150 can be sequentially stacked on a semiconductor substrate 100 .
  • the capping layer 150 , the metal gate layer 140 , the barrier metal layer 130 , and the gate polysilicon layer 120 can be (sequentially) patterned to form a gate pattern 155 .
  • the gate pattern 155 can comprise stacked gate layers of corresponding patterns: a polysilicon pattern 120 , a barrier metal pattern 130 , a metal gate pattern 140 , and a capping pattern 150 .
  • the terms “layer” and “pattern” may be used interchangeably below to indicate the stacked components on the semiconductor or other base substrate forming the gate pattern.
  • the gate insulator 110 may be formed by thermally oxidizing the semiconductor substrate 100 .
  • the gate insulator 110 may be removed during the patterning process to expose the semiconductor substrate 100 , and subsequently formed again by a thermal treatment process.
  • the barrier metal layer 130 may comprise tungsten nitride (WN) and/or titanium nitride (TiN) that may be formed by a physical vapor deposition (PVD) or a chemical vapor deposition (CVD).
  • the metal gate layer 140 may comprise tungsten.
  • the gate polysilicon layer 120 may comprise polysilicon doped by impurities.
  • the capping layer 150 may comprise silicon oxide and/or silicon nitride.
  • an oxidation barrier layer 160 can be selectively formed on at least portions of the sidewalls of the metal gate pattern 140 and on at least sidewalls (and typically at least a major portion of the primary upper and lower surfaces) of the barrier metal pattern 130 .
  • the oxidation barrier layer 160 can comprise metal as a constituent or the constituent forming the oxidation barrier layer 160 .
  • the oxidation barrier layer 160 may be configured so as to cover substantially only the sidewalls of the metal gate pattern 140 .
  • the oxidation barrier layer 160 may be configured to cover only the lower portion of the sidewall(s) of the metal-gate pattern 140 .
  • the oxidation barrier layer 160 may be formed by any suitable process, including but not limited to, chemical vapor deposition (CVD) or atomic layer deposition (ALD).
  • the oxidation barrier layer 160 can be relatively well-deposited (with a desired thickness) on sidewalls of the metal containing layers 130 and 140 but deposited in substantially reduced amounts, regions or thickness on surfaces of other layers, including adjacent layers or patterns 120 and 150 or more remote layer 110 .
  • This differential or selectivity may be carried out using differences in chemical properties of materials forming or coating the layers, such as a nucleation rate.
  • a metal layer in order to form the oxidation barrier layer 160 , can be (selectively) deposited and the deposited metal layer can be treated to form a metal oxide or metal nitride barrier layer.
  • the oxidation barrier layer 160 can be formed with a thickness of between about 5 ⁇ 100 ⁇ .
  • an aluminum layer may be formed substantially only on sidewalls of the metal-containing layers 130 and 140 by supplying methylpyrrolidine alane (MPA) as a source gas and argon (Ar) of as a carrier gas.
  • MPA methylpyrrolidine alane
  • Ar argon
  • the Ar is supplied at about 100 sccm, at a temperature of between about 135 ⁇ 145° C. at a pressure of between about 0.1 ⁇ 1.1 Torr for about 5 seconds using a CVD method.
  • the aluminum layer can be naturally oxidized (at pressures at about and/or under atmospheric pressure) to form the aluminum oxide for the oxidation barrier layer 160 .
  • the aluminum layer may be selectively deposited on surfaces of the metal containing layers 130 , 140 but substantially not on other adjacent layers 110 , 120 and 150 .
  • a thermal treatment process can be performed with respect to the semiconductor substrate 100 having the gate pattern 155 with the oxidation barrier layer 160 under an oxygen-enriched environment or ambience, thereby curing etch damage caused during the patterning process (such as results in the pattern shown in FIG. 2A ).
  • the thermal treatment process under the oxygen-enriched environment or ambience may be performed by supplying nitrogen (N 2 ) as a carrier gas and supplying hydrogen (H2) and oxygen (O 2 ) at a temperature of between about 750 ⁇ 950° C.
  • the ratio of oxygen/hydrogen may be between about 0.5 ⁇ 1.3.
  • the oxidation barrier layer 160 can inhibit and/or prevent oxygen penetration into the metal gate pattern 140 to inhibit formation of an oxide layer between the metal gate pattern 140 and the gate polysilicon pattern 120 . This, in turn, may improve reliability and/or operational speed in a semiconductor device, particularly a highly integrated semiconductor device with reduced size gate patterns and/or metal gate electrodes.
  • a low concentration impurity-doped region 170 can be formed in the semiconductor substrate 100 at both sides of the gate pattern 155 by using the gate pattern 155 as an ion-implantation mask.
  • the low concentration impurity-doped region 170 may be formed before forming the oxidation barrier layer 160 by implanting impurities using the gate pattern 155 as an ion-implantation mask.
  • an insulation layer can be conformably formed at an entire upper surface above the semiconductor substrate 100 , extending from where the capping layer 150 or oxidation barrier layer 160 is formed down to the gate insulation layer 110 .
  • the insulation layer can be anisotropically etched to form spacers 180 covering sidewalls of the individually stacked layers 120 , 130 , 140 , 150 that together form the sidewalls of the gate pattern 155 .
  • the insulation layer may comprise silicon oxide or silicon nitride.
  • a relatively high concentration impurity-doped region 190 can be formed in the semiconductor substrate 100 by using the gate pattern 155 and the spacer 180 as ion-implantation masks.
  • the gate pattern 155 may include a plurality of opposing sidewalls where the shape of the gate pattern 155 (when viewed from the top) is rectangular, square or other shape with more than one sidewall.
  • the gate pattern 155 can include cylindrical, circular, or other shapes with only one sidewall as well as other multi-sided configurations.
  • sidewall(s) is intended to encompass both these sidewall configurations.
  • a highly integrated device can comprise a plurality of the gate patterns 155 , repeated on the substrate, as will be understood by one of skill in the art.
  • methods of forming semiconductor devices according to embodiments of the present invention can form an oxidation barrier layer covering at least a portion of the sidewall of the metal gate pattern layer, thereby inhibiting and/or preventing formation of an oxide layer between the metal gate pattern and the gate polysilicon pattern which may occur due to oxygen penetration in a subsequent process.

Abstract

Methods of forming a semiconductor device having a metal gate electrode include sequentially forming a gate insulator, a gate polysilicon layer and a metal-gate layer on a semiconductor substrate. The metal-gate layer and the gate polysilicon layer are sequentially patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate pattern. An oxidation barrier layer is formed to cover at least a portion of a sidewall of the metal-gate pattern.

Description

    RELATED APPLICATIONS
  • This application is a divisional of U.S. patent application Ser. No. 10/780,244, filed Feb. 17, 2004, which claims priority to Korean Patent Application No. 10-2003-0010403, filed Feb. 19, 2003, the contents of which are hereby incorporated by reference as if recited in full herein.
    • FIELD OF THE INVENTION
  • The present invention relates to methods of forming semiconductor devices. More particularly, the present invention relates to methods of forming semiconductor devices having a metal gate electrode.
    • BACKGROUND OF THE INVENTION
  • As semiconductor devices become more highly integrated, the size of gate patterns can be reduced which can change an electrical property associated with the gate pattern. For example, where a metal silicide, such as tungsten silicide, is used as a gate pattern, resistance of the gate pattern can increase (sometimes relatively rapidly) as size of the gate pattern is reduced. Thus, in order to adjust for the resistance increase caused by the reduced size gate pattern in a highly integrated semiconductor device, a metal (such as tungsten) having a low resistance can be used to offset the increased resistance caused by the reduced size gate pattern. FIG. 1 is a cross-sectional diagram of a semiconductor device having a metal gate electrode according to the prior art. Referring to FIG. 1, a gate insulator 3, a gate polysilicon layer 5, a barrier metal layer 7, a metal gate layer 9, and a capping layer 11 are sequentially formed and patterned to form a gate pattern 13. In order to treat etch damage that can occur at the semiconductor substrate 1 and the gate polysilicon layer 5 during the patterning process, a thermal treatment process can be performed in an oxygen environment. At this time, as through a side surface of the metal gate layer 9 while thermal treating under the oxygen environment, thereby forming an oxide layer “O” at a boundary between the metal barrier layer 7 and the gate polysilicon layer 5. The oxide layer “O” may increase resistance between the metal gate layer 9 and the gate polysilicon layer 5. The increased resistance attributed to the oxide layer may result in one or more of an RC (time constant) delay, a lower operational speed and reliability in a semiconductor device.
    • SUMMARY
  • Embodiments of the invention provide methods of forming a semiconductor device that can inhibit and/or prevent oxide formation between a metal gate layer and a gate polysilicon layer in a gate pattern.
  • Certain embodiments of the invention are directed to methods that include forming an oxidation barrier layer covering at least a portion of a sidewall of a metal gate layer.
  • In particular embodiments, the method can include: sequentially forming a gate insulator, a gate polysilicon layer and a metal-containing layer on a semiconductor substrate. The metal-containing layer and the gate polysilicon layer can be (sequentially) patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate (comprising a metal containing) pattern.
  • The method can include forming an oxidation barrier layer to cover at least a portion of a sidewall of the metal-containing pattern. In particular embodiments, the oxidation barrier layer can be formed by chemical vapor deposition (CVD) and/or an atomic layer deposition (ALD).
  • In certain embodiments, the oxidation barrier layer can be deposited on sidewalls of the metal-containing layer with a greater thickness than on surfaces of other layers due to a difference of chemical properties in the material of the other layers, such as nucleation rate.
  • The oxidation barrier layer may comprise at least one of a metal, an oxide, a nitride or an oxynitride of the metal. In particular embodiments, the metal can be selected from the group consisting of aluminum (Al), tantalum (Ta), titanium (Ti), hafnium (Hf) and gold (Au).
  • The oxidation barrier layer may be formed by selectively depositing a metal layer onto the sidewall(s) of the metal-gate pattern and then oxidizing or nitrifying the deposited metal layer.
  • In particular embodiments, the oxidation barrier layer may comprise and/or be formed of aluminum oxide (Al2O3). For example, an aluminum layer can be formed by using a CVD method and by supplying methylpyrrolidine alane (MPA) as a source gas and argon (Ar) of 100 sccm as a carrier gas at a temperature of between about 135˜145° C. and at a pressure of between about 0.1˜1.1 Torr, and the aluminum layer can be oxidized under an oxygen-enriched environment or ambience.
  • According to another embodiment of the present invention, the metal-containing layer can be formed of a barrier metal layer and a metal gate layer that are sequentially stacked. The gate pattern can comprise a gate polysilicon pattern, a barrier metal pattern and a metal gate pattern that are sequentially stacked. In particular embodiments, the metal gate layer can comprise tungsten. The barrier metal layer can comprise tungsten nitride (WN) and/or titanium nitride (TiN). The oxidation barrier layer may be selectively formed to cover substantially only the metal gate pattern.
  • In certain embodiments, the methods can include forming a capping layer on the metal-containing layer. The capping layer can be patterned when the metal-containing layer and the gate polysilicon layer are sequentially patterned, thereby forming a gate pattern comprising a gate polysilicon pattern, a metal-containing pattern and a capping pattern that are sequentially stacked.
  • In particular embodiments, a thermal treating process may be subsequently performed with respect to the semiconductor substrate having the gate pattern with the oxidation barrier layer under an oxygen-enriched environment or ambience. The thermal treating process under the oxygen environment may comprise supplying nitrogen as a carrier gas and supplying oxygen and hydrogen at a temperature of between about 750˜950° C. with a ratio of oxygen/hydrogen of between about 0.5˜1.3.
  • The oxidation barrier layer can inhibit oxygen penetration into the metal-containing layer so that there is a reduced and/or no formation of a conventional oxide layer between the gate polysilicon pattern and the metal-containing pattern.
  • Still other embodiments are directed to methods of forming an integrated circuit device having a metal gate electrode. The methods include: (a) forming a stacked gate pattern onto a target substrate, the gate pattern comprising a metal-gate pattern with opposing first and second surfaces and at least one sidewall; and (b) covering at least a portion of the at least one sidewall of the metal-gate pattern with an oxidation barrier layer.
  • In particular embodiments, the covering of the at least one sidewall of the metal-gate pattern comprises conformably covering substantially the entire outer surface of the sidewall(s) of the metal-gate pattern with the oxidation barrier layer, and, as desired also covering the sidewalls of a barrier metal layer abutting the metal-gate pattern. The gate pattern can be formed so that it is substantially devoid of the oxidation barrier layer proximate to a sidewall of a respective gate polysilicon pattern and a capping pattern.
  • In certain embodiments, the method can include thermally treating the gate pattern in an oxygen-enriched environment and inhibiting an oxide layer from forming between the metal-barrier layer and the gate polysilicon layer based on the configuration of the oxidation barrier layer.
  • Other embodiments are directed to highly integrated semiconductor circuit devices with metal gate electrodes and a reduced gate pattern size. The devices include: (a) a substrate; (b) a gate insulation layer disposed over the substrate; (c) a plurality of spaced apart first gate patterns stacked on the gate insulation layer above the substrate; (d) a plurality of corresponding spaced apart metal barrier patterns, a respective one stacked on each of the first gate patterns above the gate insulation layer, the metal barrier patterns having at least one upwardly extending sidewall; (e) a plurality of corresponding second metal gate patterns, a respective one stacked on each of the metal barrier patterns above the first gate layer, the second metal gate patterns having at least one upwardly extending sidewall; (f) a plurality of corresponding capping patterns, a respective one stacked on each of the metal gate patterns above the metal barrier layer; and (g) an oxidation barrier layer conformably disposed over the metal barrier pattern sidewalls and the metal gate pattern sidewalls and being substantially absent on sidewalls of the first gate patterns and the sidewalls of the capping layer pattern. The device is substantially devoid of an oxide layer extending at a boundary portion located between respective metal barrier patterns and the corresponding first gate layers. The oxidation barrier layer may have a thickness of between about 5˜100 Å.
  • The foregoing and other objects and aspects of the present invention are described in greater detail in the drawings herein and the specification set forth below.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a cross-sectional diagram of a prior art semiconductor device having a metal gate electrode according to a conventional technology.
  • FIGS. 2A through 2C are cross-sectional diagrams sequentially illustrating exemplary operations and/or features for forming a semiconductor device having a metal gate electrode according to embodiments of the present invention.
    • DETAILED DESCRIPTION
  • The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
  • In the drawings, the thickness of layers and regions may be exaggerated for clarity. It will be understood that when an element such as a layer, region or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present.
  • Furthermore, relative terms, such as “beneath”, may be used herein to describe one element's relationship to another elements as illustrated in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” other elements would then be oriented “above” the other elements. The exemplary term “below”, can therefore, encompasses both an orientation of above and below.
  • It will be understood that although the terms first and second may be used herein to describe various regions, layers and/or sections, these regions, layers and/or sections should not be limited by these terms. These terms are used to distinguish one region, layer or section from another region, layer or section. Thus, a first region, layer or section discussed below could be termed a second region, layer or section, and similarly, a second without departing from the teachings of the present invention. Like numbers refer to like elements throughout. In addition, although described herein with respect to semiconductor substrates and devices, the present invention is directed to integrated circuits and can include structures formed on other substrates.
  • FIGS. 2A through 2C are cross-sectional diagrams sequentially illustrating exemplary operations and/or features of forming a semiconductor device having a metal gate electrode according to embodiments of the present invention.
  • Referring to FIG. 2A, a gate insulator 110, a gate polysilicon layer 120, a barrier metal layer 130, a metal gate layer 140 and a capping layer 150 can be sequentially stacked on a semiconductor substrate 100. The capping layer 150, the metal gate layer 140, the barrier metal layer 130, and the gate polysilicon layer 120 can be (sequentially) patterned to form a gate pattern 155. As such, the gate pattern 155 can comprise stacked gate layers of corresponding patterns: a polysilicon pattern 120, a barrier metal pattern 130, a metal gate pattern 140, and a capping pattern 150. The terms “layer” and “pattern” may be used interchangeably below to indicate the stacked components on the semiconductor or other base substrate forming the gate pattern.
  • The gate insulator 110 may be formed by thermally oxidizing the semiconductor substrate 100. The gate insulator 110 may be removed during the patterning process to expose the semiconductor substrate 100, and subsequently formed again by a thermal treatment process. The barrier metal layer 130 may comprise tungsten nitride (WN) and/or titanium nitride (TiN) that may be formed by a physical vapor deposition (PVD) or a chemical vapor deposition (CVD). The metal gate layer 140 may comprise tungsten. The gate polysilicon layer 120 may comprise polysilicon doped by impurities. The capping layer 150 may comprise silicon oxide and/or silicon nitride.
  • Referring to FIG. 2B, an oxidation barrier layer 160 can be selectively formed on at least portions of the sidewalls of the metal gate pattern 140 and on at least sidewalls (and typically at least a major portion of the primary upper and lower surfaces) of the barrier metal pattern 130. The oxidation barrier layer 160 can comprise metal as a constituent or the constituent forming the oxidation barrier layer 160. In certain embodiments, the oxidation barrier layer 160 may be configured so as to cover substantially only the sidewalls of the metal gate pattern 140. In other embodiments, the oxidation barrier layer 160 may be configured to cover only the lower portion of the sidewall(s) of the metal-gate pattern 140. The oxidation barrier layer 160 may be formed by any suitable process, including but not limited to, chemical vapor deposition (CVD) or atomic layer deposition (ALD).
  • In particular embodiments, the oxidation barrier layer 160 can be relatively well-deposited (with a desired thickness) on sidewalls of the metal containing layers 130 and 140 but deposited in substantially reduced amounts, regions or thickness on surfaces of other layers, including adjacent layers or patterns 120 and 150 or more remote layer 110. This differential or selectivity may be carried out using differences in chemical properties of materials forming or coating the layers, such as a nucleation rate.
  • In certain embodiments, in order to form the oxidation barrier layer 160, a metal layer can be (selectively) deposited and the deposited metal layer can be treated to form a metal oxide or metal nitride barrier layer. The oxidation barrier layer 160 can be formed with a thickness of between about 5˜100 Å.
  • In certain embodiments, such as when the oxidation barrier layer 160 is formed of aluminum oxide (Al2O3), an aluminum layer may be formed substantially only on sidewalls of the metal-containing layers 130 and 140 by supplying methylpyrrolidine alane (MPA) as a source gas and argon (Ar) of as a carrier gas. Typically the Ar is supplied at about 100 sccm, at a temperature of between about 135˜145° C. at a pressure of between about 0.1˜1.1 Torr for about 5 seconds using a CVD method. The aluminum layer can be naturally oxidized (at pressures at about and/or under atmospheric pressure) to form the aluminum oxide for the oxidation barrier layer 160. The aluminum layer may be selectively deposited on surfaces of the metal containing layers 130, 140 but substantially not on other adjacent layers 110, 120 and 150.
  • Referring to FIG. 2C, a thermal treatment process can be performed with respect to the semiconductor substrate 100 having the gate pattern 155 with the oxidation barrier layer 160 under an oxygen-enriched environment or ambience, thereby curing etch damage caused during the patterning process (such as results in the pattern shown in FIG. 2A). The thermal treatment process under the oxygen-enriched environment or ambience may be performed by supplying nitrogen (N2) as a carrier gas and supplying hydrogen (H2) and oxygen (O2) at a temperature of between about 750˜950° C. In particular embodiments, the ratio of oxygen/hydrogen may be between about 0.5˜1.3. The oxidation barrier layer 160 can inhibit and/or prevent oxygen penetration into the metal gate pattern 140 to inhibit formation of an oxide layer between the metal gate pattern 140 and the gate polysilicon pattern 120. This, in turn, may improve reliability and/or operational speed in a semiconductor device, particularly a highly integrated semiconductor device with reduced size gate patterns and/or metal gate electrodes.
  • Still referring to FIG. 2C, a low concentration impurity-doped region 170 can be formed in the semiconductor substrate 100 at both sides of the gate pattern 155 by using the gate pattern 155 as an ion-implantation mask. The low concentration impurity-doped region 170 may be formed before forming the oxidation barrier layer 160 by implanting impurities using the gate pattern 155 as an ion-implantation mask.
  • In operation, an insulation layer can be conformably formed at an entire upper surface above the semiconductor substrate 100, extending from where the capping layer 150 or oxidation barrier layer 160 is formed down to the gate insulation layer 110. The insulation layer can be anisotropically etched to form spacers 180 covering sidewalls of the individually stacked layers 120, 130, 140, 150 that together form the sidewalls of the gate pattern 155. The insulation layer may comprise silicon oxide or silicon nitride. A relatively high concentration impurity-doped region 190 can be formed in the semiconductor substrate 100 by using the gate pattern 155 and the spacer 180 as ion-implantation masks.
  • The gate pattern 155 may include a plurality of opposing sidewalls where the shape of the gate pattern 155 (when viewed from the top) is rectangular, square or other shape with more than one sidewall. However, the gate pattern 155 can include cylindrical, circular, or other shapes with only one sidewall as well as other multi-sided configurations. Hence, in the claims, the term “sidewall(s)” is intended to encompass both these sidewall configurations. In addition, although a respective one gate pattern 155 is illustrated, a highly integrated device can comprise a plurality of the gate patterns 155, repeated on the substrate, as will be understood by one of skill in the art.
  • Accordingly, methods of forming semiconductor devices according to embodiments of the present invention can form an oxidation barrier layer covering at least a portion of the sidewall of the metal gate pattern layer, thereby inhibiting and/or preventing formation of an oxide layer between the metal gate pattern and the gate polysilicon pattern which may occur due to oxygen penetration in a subsequent process.

Claims (18)

1. A highly integrated semiconductor circuit device with metal gate electrodes and a reduced gate pattern size, comprising:
a substrate;
a gate insulation layer disposed over the substrate;
a plurality of spaced apart first gate layer patterns stacked on the gate insulation layer above the substrate;
a plurality of spaced apart barrier metal patterns, a respective one stacked on each of the first gate layer patterns above the gate insulation layer, the barrier metal patterns having at least one upwardly extending sidewall;
a plurality of metal gate patterns, a respective one stacked on each of the barrier metal patterns above the first gate layer pattern, the metal gate patterns having at least one upwardly extending sidewall;
a plurality of capping patterns, a respective one stacked on each of the metal gate patterns above the barrier metal pattern; and
an oxidation barrier layer conformably disposed over the barrier metal pattern sidewalls and the metal gate pattern sidewalls and being substantially absent on sidewalls of the first gate layer patterns and the sidewalls of the capping layer pattern, wherein the device is substantially devoid of an oxide layer extending at a boundary portion located between respective barrier metal patterns and the corresponding first gate layer patterns.
2. A device according to claim 1, wherein the oxidation barrier layer has a thickness of between about 5˜100 Å.
3. A device according to claim 1, wherein the first gate layer patterns comprise gate polysilicon patterns.
4. A device according to claim 3, wherein the barrier metal pattern is directly stacked on the gate polysilcon pattern.
5. A device according to claim 4, wherein the oxidation barrier layer comprises metal.
6. A device according to claim 4, wherein the barrier and/or metal gate patterns comprise tungsten.
7. A device according to claim 1, wherein the barrier metal pattern comprises tungsten nitride (WN) or titanium nitride (TiN).
8. A semiconductor device with a metal gate electrode, comprising:
a semiconductor substrate; and
a metal gate electrode on the substrate, the metal gate electrode comprising a stacked gate pattern comprising a gate polysilicon pattern, a barrier metal pattern on the gate polysilicon pattern, and a metal gate pattern on the barrier metal pattern, wherein the device is substantially devoid of an oxide layer extending at a boundary portion located between the barrier metal pattern and the gate polysilicon pattern.
9. A device according to claim 8, wherein the barrier and/or metal gate patterns comprises tungsten.
10. A device according to claim 8, wherein the barrier metal layer comprises tungsten nitride (WN) or titanium nitride (TiN).
11. A device according to claim 8, further comprising an oxidation barrier layer, wherein the oxidation barrier layer covers substantially only sidewall(s) of the metal gate pattern and the barrier metal pattern.
12. A device according to claim 8, further comprising a capping layer on the metal gate pattern layer, wherein the capping layer is patterned thereby forming a device with the stacked gate pattern that comprises, in serial order, the gate polysilicon pattern, the metal-gate pattern and the capping pattern.
13. A device according to claim 11, further comprising a spacer layer abutting a sidewall of the stacked gate pattern including a sidewall(s) of the polysilicon gate pattern, a sidewall(s) of the oxidation barrier layer that resides over the sidewall(s) of the metal-gate pattern and the barrier metal pattern, and a sidewall(s) of the capping pattern.
14. A device according to claim 8, further comprising an impurity-doped region in the semiconductor substrate at opposing sides of the stacked gate pattern.
15. A device according to claim 11, wherein the oxidation layer comprises aluminum.
16. A device according to claim 12, further comprising an oxidation barrier layer, wherein the oxidation barrier layer covers substantially only sidewall(s) of the metal gate pattern and the barrier metal pattern such that the gate polysilicon pattern and the capping pattern are devoid of the oxidation barrier layer.
17. A semiconductor device with a metal gate electrode, comprising:
a semiconductor substrate;
a metal gate electrode on the substrate, the metal gate electrode comprising a stacked gate pattern comprising a gate polysilicon pattern, a barrier metal pattern on the gate polysilicon pattern, and a metal gate pattern on the barrier metal pattern, and a capping pattern on the metal gate pattern; and
an oxidation barrier layer, wherein the oxidation barrier layer covers substantially only sidewall(s) of the metal gate pattern and the barrier metal pattern such that the gate polysilicon pattern and the capping pattern are devoid of the oxidation barrier layer, wherein the device is substantially devoid of an oxide layer extending at a boundary portion located between the barrier metal pattern and the gate polysilicon pattern.
18. A device according to claim 17, wherein the oxidation barrier layer has a thickness of between about 5˜100 Å.
US11/386,644 2003-02-19 2006-03-22 Methods of forming a semiconductor device having a metal gate electrode and associated devices Abandoned US20060163677A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/386,644 US20060163677A1 (en) 2003-02-19 2006-03-22 Methods of forming a semiconductor device having a metal gate electrode and associated devices

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020030010403A KR100634163B1 (en) 2003-02-19 2003-02-19 Method of forming a semiconductor device having a metal gate electrode
KR10-2003-0010403 2003-02-19
US10/780,244 US7098123B2 (en) 2003-02-19 2004-02-17 Methods of forming a semiconductor device having a metal gate electrode and associated devices
US11/386,644 US20060163677A1 (en) 2003-02-19 2006-03-22 Methods of forming a semiconductor device having a metal gate electrode and associated devices

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/780,244 Division US7098123B2 (en) 2003-02-19 2004-02-17 Methods of forming a semiconductor device having a metal gate electrode and associated devices

Publications (1)

Publication Number Publication Date
US20060163677A1 true US20060163677A1 (en) 2006-07-27

Family

ID=36695889

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/780,244 Expired - Lifetime US7098123B2 (en) 2003-02-19 2004-02-17 Methods of forming a semiconductor device having a metal gate electrode and associated devices
US11/386,644 Abandoned US20060163677A1 (en) 2003-02-19 2006-03-22 Methods of forming a semiconductor device having a metal gate electrode and associated devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US10/780,244 Expired - Lifetime US7098123B2 (en) 2003-02-19 2004-02-17 Methods of forming a semiconductor device having a metal gate electrode and associated devices

Country Status (2)

Country Link
US (2) US7098123B2 (en)
KR (1) KR100634163B1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090026584A1 (en) * 2007-07-27 2009-01-29 Dong Sook Chang Method for manufacturing semiconductor device
US20090236682A1 (en) * 2008-03-20 2009-09-24 Hocine Boubekeur Layer stack including a tungsten layer
US20090250749A1 (en) * 2004-11-26 2009-10-08 Samsung Electronics Co., Ltd. Methods of Forming Asymmetric Recesses and Gate Structures that Fill such Recesses and Related Methods of Forming Semiconductor Devices that Include such Recesses and Gate Structures
US20100248437A1 (en) * 2005-08-24 2010-09-30 Yong-Sung Kim Methods of forming recessed gate structures including blocking members, and methods of forming semiconductor devices having the recessed gate structures

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI252512B (en) * 2004-10-20 2006-04-01 Hynix Semiconductor Inc Semiconductor device and method of manufacturing the same
KR100703835B1 (en) * 2005-06-30 2007-04-06 주식회사 하이닉스반도체 Semiconductor device with dual polysilicon gate to prevent polysilicon depletion effect and method for manufacturing the same
KR100951559B1 (en) * 2007-01-03 2010-04-09 주식회사 하이닉스반도체 Method for forming gate electrode of semiconductor device
US10755945B2 (en) * 2018-07-16 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Metal contacts on metal gates and methods thereof
US20230126516A1 (en) * 2021-10-27 2023-04-27 Asm Ip Holding B.V. Methods and systems for forming doped silicon nitride films

Citations (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425574A (en) * 1979-06-29 1984-01-10 International Business Machines Corporation Buried injector memory cell formed from vertical complementary bipolar transistor circuits and method of fabrication therefor
US5576576A (en) * 1992-11-04 1996-11-19 Actel Corporation Above via metal-to-metal antifuse
US5739066A (en) * 1996-09-17 1998-04-14 Micron Technology, Inc. Semiconductor processing methods of forming a conductive gate and line
US5776823A (en) * 1995-01-12 1998-07-07 Ibm Corporation Tasin oxygen diffusion barrier in multilayer structures
US5925918A (en) * 1997-07-30 1999-07-20 Micron, Technology, Inc. Gate stack with improved sidewall integrity
US6177334B1 (en) * 1998-12-01 2001-01-23 United Microelectronics Corp. Manufacturing method capable of preventing corrosion of metal oxide semiconductor
US6187676B1 (en) * 1997-08-16 2001-02-13 Samsung Electronics Co., Ltd. Integrated circuit insulated electrode forming methods using metal silicon nitride layers, and insulated electrodes so formed
US6198144B1 (en) * 1999-08-18 2001-03-06 Micron Technology, Inc. Passivation of sidewalls of a word line stack
US6277722B1 (en) * 1999-06-24 2001-08-21 Hyundai Electronics Method for forming poly metal gate
US6281537B1 (en) * 1997-06-30 2001-08-28 Hyundai Electronics Industries Co., Ltd. Ferroelectric memory device guaranteeing electrical interconnection between lower capacitor electrode and contact plug and method for fabricating the same
US6288419B1 (en) * 1999-07-09 2001-09-11 Micron Technology, Inc. Low resistance gate flash memory
US6308309B1 (en) * 1999-08-13 2001-10-23 Xilinx, Inc. Place-holding library elements for defining routing paths
US6306743B1 (en) * 2000-11-17 2001-10-23 Hyundai Electronics Industries Co., Ltd. Method for forming a gate electrode on a semiconductor substrate
US6333250B1 (en) * 1998-12-28 2001-12-25 Hyundai Electronics Industries Co., Ltd. Method of forming gate electrode in semiconductor device
US6380008B2 (en) * 1997-06-16 2002-04-30 Texas Instruments Incorporated Edge stress reduction by noncoincident layers
US6395454B1 (en) * 1997-08-04 2002-05-28 Infineon Technologies Ag Integrated electrical circuit with passivation layer
US20020137321A1 (en) * 2001-03-23 2002-09-26 Ku Ja-Hum Method of forming a metal gate electrode
US20020140096A1 (en) * 2001-03-30 2002-10-03 Siemens Dematic Electronics Assembly Systems, Inc. Method and structure for ex-situ polymer stud grid array contact formation
US6514841B2 (en) * 2000-06-30 2003-02-04 Hyundai Electronics Industries Co., Ltd. Method for manufacturing gate structure for use in semiconductor device
US6713342B2 (en) * 2001-12-31 2004-03-30 Texas Instruments Incorporated FeRAM sidewall diffusion barrier etch
US6717196B2 (en) * 2001-09-13 2004-04-06 Samsung Electronics Co., Ltd. Ferroelectric memory device
US6717197B2 (en) * 2001-09-21 2004-04-06 Samsung Electronics Co., Ltd. Ferroelectric memory device and method of fabricating the same
US20040104754A1 (en) * 2002-11-29 2004-06-03 Rainer Bruchhaus Radiation protection in integrated circuits
US6800890B1 (en) * 2002-12-30 2004-10-05 Infineon Technologies Aktiengesellschaft Memory architecture with series grouped by cells
US6849544B2 (en) * 1998-02-26 2005-02-01 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
US6876021B2 (en) * 2002-11-25 2005-04-05 Texas Instruments Incorporated Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier
US20050275046A1 (en) * 2004-06-14 2005-12-15 Matthias Goldbach Multi-layer gate stack structure comprising a metal layer for a fet device, and method for fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100289808B1 (en) 1999-03-31 2001-05-15 김영환 Manufacturing method for mos transistor
KR100460069B1 (en) * 2003-04-14 2004-12-04 주식회사 하이닉스반도체 Method for forming gate in semiconductor device
US7306995B2 (en) * 2003-12-17 2007-12-11 Texas Instruments Incorporated Reduced hydrogen sidewall spacer oxide

Patent Citations (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425574A (en) * 1979-06-29 1984-01-10 International Business Machines Corporation Buried injector memory cell formed from vertical complementary bipolar transistor circuits and method of fabrication therefor
US5576576A (en) * 1992-11-04 1996-11-19 Actel Corporation Above via metal-to-metal antifuse
US5776823A (en) * 1995-01-12 1998-07-07 Ibm Corporation Tasin oxygen diffusion barrier in multilayer structures
US5796166A (en) * 1995-01-12 1998-08-18 Ibm Corporation Tasin oxygen diffusion barrier in multilayer structures
US5739066A (en) * 1996-09-17 1998-04-14 Micron Technology, Inc. Semiconductor processing methods of forming a conductive gate and line
US6844252B2 (en) * 1996-09-17 2005-01-18 Micron Technology, Inc. Semiconductor processing methods of forming a conductive gate and line
US6380008B2 (en) * 1997-06-16 2002-04-30 Texas Instruments Incorporated Edge stress reduction by noncoincident layers
US6281537B1 (en) * 1997-06-30 2001-08-28 Hyundai Electronics Industries Co., Ltd. Ferroelectric memory device guaranteeing electrical interconnection between lower capacitor electrode and contact plug and method for fabricating the same
US5925918A (en) * 1997-07-30 1999-07-20 Micron, Technology, Inc. Gate stack with improved sidewall integrity
US5998290A (en) * 1997-07-30 1999-12-07 Micron Technology, Inc. Method to protect gate stack material during source/drain reoxidation
US6075274A (en) * 1997-07-30 2000-06-13 Micron Technology, Inc. Semiconductor devices having gate stack with improved sidewall integrity
US6395454B1 (en) * 1997-08-04 2002-05-28 Infineon Technologies Ag Integrated electrical circuit with passivation layer
US6187676B1 (en) * 1997-08-16 2001-02-13 Samsung Electronics Co., Ltd. Integrated circuit insulated electrode forming methods using metal silicon nitride layers, and insulated electrodes so formed
US6849544B2 (en) * 1998-02-26 2005-02-01 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
US6177334B1 (en) * 1998-12-01 2001-01-23 United Microelectronics Corp. Manufacturing method capable of preventing corrosion of metal oxide semiconductor
US6333250B1 (en) * 1998-12-28 2001-12-25 Hyundai Electronics Industries Co., Ltd. Method of forming gate electrode in semiconductor device
US6277722B1 (en) * 1999-06-24 2001-08-21 Hyundai Electronics Method for forming poly metal gate
US6514842B1 (en) * 1999-07-09 2003-02-04 Micron Technology, Inc. Low resistance gate flash memory
US6288419B1 (en) * 1999-07-09 2001-09-11 Micron Technology, Inc. Low resistance gate flash memory
US6308309B1 (en) * 1999-08-13 2001-10-23 Xilinx, Inc. Place-holding library elements for defining routing paths
US6198144B1 (en) * 1999-08-18 2001-03-06 Micron Technology, Inc. Passivation of sidewalls of a word line stack
US6514841B2 (en) * 2000-06-30 2003-02-04 Hyundai Electronics Industries Co., Ltd. Method for manufacturing gate structure for use in semiconductor device
US6306743B1 (en) * 2000-11-17 2001-10-23 Hyundai Electronics Industries Co., Ltd. Method for forming a gate electrode on a semiconductor substrate
US20020137321A1 (en) * 2001-03-23 2002-09-26 Ku Ja-Hum Method of forming a metal gate electrode
US20020140096A1 (en) * 2001-03-30 2002-10-03 Siemens Dematic Electronics Assembly Systems, Inc. Method and structure for ex-situ polymer stud grid array contact formation
US6887720B2 (en) * 2001-09-13 2005-05-03 Samsung Electronics Co., Ltd. Ferroelectric memory device and method of forming the same
US6717196B2 (en) * 2001-09-13 2004-04-06 Samsung Electronics Co., Ltd. Ferroelectric memory device
US6815227B2 (en) * 2001-09-21 2004-11-09 Samsung Electronics Co., Ltd. Method of fabricating a ferroelectric memory device
US6717197B2 (en) * 2001-09-21 2004-04-06 Samsung Electronics Co., Ltd. Ferroelectric memory device and method of fabricating the same
US6713342B2 (en) * 2001-12-31 2004-03-30 Texas Instruments Incorporated FeRAM sidewall diffusion barrier etch
US6876021B2 (en) * 2002-11-25 2005-04-05 Texas Instruments Incorporated Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier
US20040104754A1 (en) * 2002-11-29 2004-06-03 Rainer Bruchhaus Radiation protection in integrated circuits
US6940111B2 (en) * 2002-11-29 2005-09-06 Infineon Technologies Aktiengesellschaft Radiation protection in integrated circuits
US6800890B1 (en) * 2002-12-30 2004-10-05 Infineon Technologies Aktiengesellschaft Memory architecture with series grouped by cells
US20050275046A1 (en) * 2004-06-14 2005-12-15 Matthias Goldbach Multi-layer gate stack structure comprising a metal layer for a fet device, and method for fabricating the same
US7078748B2 (en) * 2004-06-14 2006-07-18 Infineon Technologies Ag Multi-layer gate stack structure comprising a metal layer for a FET device, and method for fabricating the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090250749A1 (en) * 2004-11-26 2009-10-08 Samsung Electronics Co., Ltd. Methods of Forming Asymmetric Recesses and Gate Structures that Fill such Recesses and Related Methods of Forming Semiconductor Devices that Include such Recesses and Gate Structures
US8207573B2 (en) 2004-11-26 2012-06-26 Samsung Electronics Co., Ltd. Semiconductor devices with asymmetric recesses and gate structures that fill such recesses
US20100248437A1 (en) * 2005-08-24 2010-09-30 Yong-Sung Kim Methods of forming recessed gate structures including blocking members, and methods of forming semiconductor devices having the recessed gate structures
US8183113B2 (en) * 2005-08-24 2012-05-22 Samsung Electronics Co., Ltd. Methods of forming recessed gate structures including blocking members, and methods of forming semiconductor devices having the recessed gate structures
US20090026584A1 (en) * 2007-07-27 2009-01-29 Dong Sook Chang Method for manufacturing semiconductor device
US8236697B2 (en) * 2007-07-27 2012-08-07 Hynix Semiconductor Inc. Method for manufacturing semiconductor device
US20090236682A1 (en) * 2008-03-20 2009-09-24 Hocine Boubekeur Layer stack including a tungsten layer

Also Published As

Publication number Publication date
KR100634163B1 (en) 2006-10-16
US7098123B2 (en) 2006-08-29
KR20040074502A (en) 2004-08-25
US20050020042A1 (en) 2005-01-27

Similar Documents

Publication Publication Date Title
US20060163677A1 (en) Methods of forming a semiconductor device having a metal gate electrode and associated devices
US7244645B2 (en) Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers and related structures
US6461960B2 (en) Method of manufacturing a semiconductor device
US7875939B2 (en) Semiconductor device including an ohmic layer
US6514841B2 (en) Method for manufacturing gate structure for use in semiconductor device
US20020192396A1 (en) Method of titanium/titanium nitride integration
US7320919B2 (en) Method for fabricating semiconductor device with metal-polycide gate and recessed channel
US20070145007A1 (en) Semiconductor structure
US6548404B2 (en) Method and apparatus for manufacturing semiconductor devices
US20060186491A1 (en) Methods of forming semiconductor devices having metal gate electrodes and related devices
US20050085071A1 (en) Methods of forming conductive metal silicides by reaction of metal with silicon
US20060079075A1 (en) Gate structures with silicide sidewall barriers and methods of manufacturing the same
KR100290467B1 (en) Method of forming a metal barrier film in a semiconductor device
US7375015B2 (en) Manufacturing method which prevents abnormal gate oxidation
JP4347479B2 (en) Field effect transistor
US20030190800A1 (en) Method of fabricating semiconductor device having metal conducting layer
KR100327588B1 (en) Method of forming W-gate electrode in semiconductor device
US7179707B2 (en) Method of forming gate electrode in semiconductor device
KR100695896B1 (en) Method of forming semiconductor device having metal gate electrode and the device so formed
KR100241200B1 (en) Semiconductor device and method for manufacturing the same
KR100379333B1 (en) Fabrication method for titanium silicide layer
KR100380163B1 (en) Method of manufacturing a transistor in a semiconductor device
US20030211672A1 (en) Method of improving quality of interface between gate and gate oxide
KR20060002061A (en) Gate structure for semiconductor device and method of manufacturing the same
KR20020010808A (en) Method for forming gate electrode in semiconductor device

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION