US6456358B1 - Surface-treatment apparatus for forming a photoresist-isolating wall on a panel - Google Patents
Surface-treatment apparatus for forming a photoresist-isolating wall on a panel Download PDFInfo
- Publication number
- US6456358B1 US6456358B1 US09/563,933 US56393300A US6456358B1 US 6456358 B1 US6456358 B1 US 6456358B1 US 56393300 A US56393300 A US 56393300A US 6456358 B1 US6456358 B1 US 6456358B1
- Authority
- US
- United States
- Prior art keywords
- photoresist
- treatment apparatus
- exposure
- photoresist layer
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
Definitions
- the present invention relates to a surface-treatment apparatus, and more particularly, to a surface-treatment apparatus for forming a photoresist-isolating wall on a panel.
- OELD organic electroluminescent diode
- a plurality of photoresist-isolating walls is perpendicularly formed on a plurality of anode electrodes to be a shadow mask.
- An organic electroluminescent layer and a cathode electrode are then evaporated ont he anode electrodes between two adjacent photoresist-isolating walls.
- the cathode electrodes on the top of the photoresist-isolating wall easily laterally diffuse to contact the anode electrodes during the evaporation. It will cause a short circuit, especially when the thickness of the photoresist-isolating wall is less than 4 ⁇ m.
- such a photoresist-isolating wall is manufactured as a reverse-trapezoid cross section wherein the top is wider than the bottom to form a protruding portion.
- the height (or thickness) of the photo-resist-isolating wall with the reverse-trapezoid cross section is limited. If the height is less than 4 ⁇ m, the protruding portion will become too small to segregate the lateral diffusing cathode materials and the anodes. It is also incapable of improving the resolution of the current panel with less than 10 ⁇ m linewidth.
- the photoresist-separating wall is apt to collapse. Also, it does not fit in the market requirement in the thin, light, short and compact display.
- the protruding portion of the reverse-trapezoid is not easily controlled.
- the formation of the photoresist-isolating walls with the reverse-trapezoid cross section comprises an exposure through a mask to define a pattern and a development to shape the walls. Yet, since there are many limitations in the exposure and the development, it is difficult to form the expected reverse-trapezoid cross section. Also, the following evaporation of the organic electroluminescent layer reduces the protruding portion of the wall. When the cathode electrode is next evaporated on the organic electroluminescent layer, it is possible to connect the cathode electrode and the anode electrode and cause the short circuit.
- the present invention provides a surface-treatment apparatus for forming a plurality of photoresist-isolating walls on an organic electroluminescent panel.
- the surface-treatment apparatus comprises a photoresist-coating module, a prebaking unit, an exposure unit, a post-exposure surface treatment module with an alkaline atmosphere, a development module and a hard baking unit.
- the photoresist-coating module coats a photoresist layer on the surface of the organic electroluminescent panel.
- the prebaking unit bakes the photoresist layer on the organic electroluminescent panel by a heating plate and initially drives solvents from the photoresist layer.
- the exposure unit performs an UV exposure process on the photoresist layer after the prebaking.
- the post-exposure surface treatment module with an alkaline atmosphere bakes the photoresist layer by a heating plate after the exposure process, wherein the alkaline atmosphere terminates a self-catalyzed reaction of photo-acid ions on the surface of the photoresist layer.
- the development module performs a developing process on the photoresist layer after the post-exposure surface treatment so as to form the plurality of photoresist-isolating walls with a T-shaped top.
- the hard baking unit bakes the plurality of photoresist-isolating walls by a heating plate, further reduces the solvents remaining in the photo-resist-isolating walls, and intensifies the strength and stability of photoresist-separating walls.
- the surface-treatment apparatus improves the quality of the photoresist-isolating walls and lowers the production cost and failure. Also, the surface-treatment apparatus can be applied to manufacture an OELD panel with better resolution and production yield.
- FIG. 1 is a block diagram of a surface-treatment of the present invention.
- FIG. 2 is a block diagram of the post-exposure surface treatment module with the alkaline atmosphere shown in FIG. 1 .
- FIG. 3 to FIG. 5 are schematic diagrams of forming a plurality of photoresist-isolating walls by the surface-treatment apparatus shown in FIG. 1 .
- FIG. 6 is a schematic diagram of the organic electroluminescent panel according to the present invention.
- FIG. 1 is a block diagram of a surface-treatment apparatus 10 according to the present invention.
- a surface-treatment apparatus 10 is used to form a plurality of photoresist-isolating walls on an organic electroluminescent panel.
- the surface-treatment apparatus 10 comprises a cleaning module 12 , a drying module 14 , a first ion generator 16 , a photoresist-coating coating module 18 , a prebaking unit 20 , a second ion generator 22 , a exposure unit 24 , a post-exposure surface treatment module 26 with an alkaline atmosphere, a third ion generator 28 , a developing module 30 , a hard baking unit 32 and a fourth generator 34 .
- the photoresist-coating module 18 is used to coat a photoresist layer on the surface of the panel.
- the prebaking unit 20 is used to bake the photoresist layer on the panel by a heating plate and initially drive solvents from the photoresist layer.
- the exposure unit 24 is used to perform an UV exposure process on the photoresist layer after the prebaking.
- the post-exposure surface treatment module 26 with the alkaline atmosphere is used to terminates the self-catalyzed reaction of photo-acid ions on the surface of the photoresist layer, and to bake and reorganize the photoresist layer by a heating plate after the exposure process.
- the development module 30 is used to perform a developing process on the photoresist layer after the post exposure baking so as to form the plurality of photoresist-isolating walls.
- the hard baking unit 32 is used to bake the plurality of photoresist-isolating walls by a heating plate and further reduce the solvents remaining in the photoresist-isolating walls.
- the ion generators 16 , 22 , 28 , 32 are used to remove the static electricity that will discharge and cause breakdown on the panel.
- FIG. 2 is a block diagram of the post-exposure surface treatment module 26 with the alkaline atmosphere shown in FIG. 1 .
- the post-exposure surface treatment module 26 comprises a chamber 36 where a heating plate (not shown) is installed for post exposure baking the photoresist layer, an alkaline atmosphere source 37 for providing the alkaline atmosphere, a concentration controller 38 where several filters with different filtering standards such as active charcoal are fitted, and a time controller 39 for controlling the processing time of the alkaline atmosphere and the post-exposure surface treatment.
- the photoresist layer is made of a chemical amplified photoresist composition that comprises photo-acid generators, at least one polymer such as tert-butoxy protective group, and at least one additive such as photo-acid quencher.
- the alkaline atmosphere is made of tetramethyl ammonium hydroxide, (TMAH) ((CH 3 ) 4 NOH), potassium hydroxide (KOH), or an exhaust alkaline gas that is made by recycling TMAH in the developing module 30 through the filtration of steam and impurities.
- TMAH tetramethyl ammonium hydroxide
- KOH potassium hydroxide
- an exhaust alkaline gas that is made by recycling TMAH in the developing module 30 through the filtration of steam and impurities.
- the photo-acid generators of the photoresist layer generate photo-acid ions.
- the photo-acid ions obtain sufficient energy to make the polymer on a deprotection reaction, which will promote a self-catalyzed reaction of the photo-acid ions.
- the alkaline atmosphere filled in the chamber 36 surfacely neutralizes the photo-acid ions of the photoresist layer and then terminates the self-catalyzed reaction of photo-acid ions on the surface of the photoresist layer. Consequently, in the follow-up developing process, the top of the photoresist-isolating wall becomes the T shape wherein the protruding portion of the T-shaped top is used as a shadow mask.
- FIG. 3 to FIG. 5 are schematic diagrams of forming a plurality of photoresist-isolating walls by the surface-treatment apparatus 10 shown in FIG. 1 .
- the surface-treatment apparatus 10 is used to form a plurality of photoresist-isolating wall 50 on an organic electroluminescent panel 40 .
- the organic electroluminescent panel 40 comprises a substrate 42 , and a plurality of first electrodes 44 in parallel positioned on the substrate 42 corresponding to luminescent areas.
- the panel 40 is placed in the cleaning module 12 and the drying module 14 in sequence to clean and dry the surface of the panel 40 .
- the first ion generator 16 is used to remove the static electricity on the panel 40 .
- a chemical amplified photoresist composition is coated on the panel 40 in the photoresist-coating module 18 to be a photoresist layer 46 as shown in FIG. 4 that is a cross-section diagram along line 3 — 3 of the panel 40 shown in FIG. 3 .
- the panel 40 is baked in the prebaking unit 20 to drive the solvents from the photoresist layer 46 and then the static electricity is neutralized by the second ion generator 22 .
- the exposure process is performed on the photoresist layer 46 by a mask with a predetermined pattern through a deep ultraviolet with 254 nm wave-length to make the photo-acid generators create photo-acid ions.
- the photoresist layer 26 is baked in the post-exposure surface treatment unit 26 by a heating plate to promote the self-catalyzed reaction of the photo-acid ions in the photoresist layer 46 .
- the atmosphere filled in the post-exposure surface treatment unit 26 surfacely terminates the self-catalyzed reaction of the photo-acid ions of the photoresist layer 46 .
- the developing process is performed on the photoresist layer 46 in the developing module 30 . Thereby, the plurality of parallel photoresist-isolating walls 50 with T-shaped top 48 is perpendicularly formed on the first electrodes 44 as shown in FIG. 5 .
- the photoresist-isolating walls 50 are baked by a heating plate in the hard baking unit 32 to further reduce the remaining solvents and to improve the strength and stability of the photoresist-isolating walls.
- the fourth ion generator 34 is employed to neutralize the static electricity on the panel 40 so as to complete the photoresist-isolating walls 50 with the T-shaped top 48 .
- FIG. 6 is a schematic diagram of the organic electroluminescent panel 40 according to the present invention.
- an organic electroluminescent layer 52 is evaporated on the first electrodes between two adjacent photoresist-isolating walls 50 .
- a plurality of parallel second electrodes 54 is evaporated on the organic electroluminescent layer 52 wherein the second electrode 54 is perpendicular to the first electrode 44 .
- the second electrodes 54 and the first electrodes 44 sandwich the organic electroluminescent layer 52 to form a plurality of luminescent pixels for emitting red, green or blue light in matrix array on the panel 40 .
- the height of the photoresist-isolating wall 50 can be lowered (less than 0.8 ⁇ m) and the bottom width of the photoresist-separating wall 50 can be lessened to significantly reduce the possibility of lateral diffusion during the evaporation of the second electrodes and to increase the resolution and the yield of the panel 40 .
- the surface-treatment apparatus 10 employs the post-exposure surface treatment unit 26 with the recycling alkaline atmosphere to the surface treatment of the photoresist layer 46 so as to form the photoresist-isolating wall 50 with the T-shaped top 48 in the developing process. It economizes on production cost and processing time, diminishes the alkaline pollutant to environment, and therefore fits in mass production.
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW089206837U TW453612U (en) | 2000-04-26 | 2000-04-26 | Surface processing device of display panel |
TW089206837U | 2000-04-26 |
Publications (1)
Publication Number | Publication Date |
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US6456358B1 true US6456358B1 (en) | 2002-09-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/563,933 Expired - Fee Related US6456358B1 (en) | 2000-04-26 | 2000-05-04 | Surface-treatment apparatus for forming a photoresist-isolating wall on a panel |
Country Status (2)
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US (1) | US6456358B1 (en) |
TW (1) | TW453612U (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040062857A1 (en) * | 2000-06-08 | 2004-04-01 | Kenichi Nagayama | Organic electroluminescent display panel and its manufacturing method |
US20070212655A1 (en) * | 2006-03-13 | 2007-09-13 | Kuo-Kuei Fu | Method for applying T-shaped photo-resist pattern to fabricate a wiring pattern with small structural dimensions |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
CN107180925A (en) * | 2017-07-20 | 2017-09-19 | 京东方科技集团股份有限公司 | The preparation method of array base palte and the preparation method of display device |
CN110518147A (en) * | 2019-08-30 | 2019-11-29 | 京东方科技集团股份有限公司 | Display panel and its manufacturing method, display device |
US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3635711A (en) * | 1969-06-06 | 1972-01-18 | Grace W R & Co | Method and automated apparatus for photocomposing |
US5430303A (en) * | 1992-07-01 | 1995-07-04 | Nikon Corporation | Exposure apparatus |
US5932380A (en) * | 1996-03-25 | 1999-08-03 | Tokyo Electron Limited | Method of processing resist utilizing alkaline component monitoring |
US6002108A (en) * | 1997-01-16 | 1999-12-14 | Tokyo Electron Limited | Baking apparatus and baking method |
US6004721A (en) * | 1997-02-07 | 1999-12-21 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
US6037097A (en) * | 1998-01-27 | 2000-03-14 | International Business Machines Corporation | E-beam application to mask making using new improved KRS resist system |
US6171765B1 (en) * | 1998-05-26 | 2001-01-09 | Agilent Technologies, Inc. | Photolithographic processing for polymer LEDs with reactive metal cathodes |
US20010035714A1 (en) * | 2000-04-26 | 2001-11-01 | Tien-Rong Lu | Method for forming a photosensitive pixel-defining layer on an OLED panel |
-
2000
- 2000-04-26 TW TW089206837U patent/TW453612U/en unknown
- 2000-05-04 US US09/563,933 patent/US6456358B1/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3635711A (en) * | 1969-06-06 | 1972-01-18 | Grace W R & Co | Method and automated apparatus for photocomposing |
US5430303A (en) * | 1992-07-01 | 1995-07-04 | Nikon Corporation | Exposure apparatus |
US5932380A (en) * | 1996-03-25 | 1999-08-03 | Tokyo Electron Limited | Method of processing resist utilizing alkaline component monitoring |
US6002108A (en) * | 1997-01-16 | 1999-12-14 | Tokyo Electron Limited | Baking apparatus and baking method |
US6004721A (en) * | 1997-02-07 | 1999-12-21 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
US6037097A (en) * | 1998-01-27 | 2000-03-14 | International Business Machines Corporation | E-beam application to mask making using new improved KRS resist system |
US6171765B1 (en) * | 1998-05-26 | 2001-01-09 | Agilent Technologies, Inc. | Photolithographic processing for polymer LEDs with reactive metal cathodes |
US20010035714A1 (en) * | 2000-04-26 | 2001-11-01 | Tien-Rong Lu | Method for forming a photosensitive pixel-defining layer on an OLED panel |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040062857A1 (en) * | 2000-06-08 | 2004-04-01 | Kenichi Nagayama | Organic electroluminescent display panel and its manufacturing method |
US20070212655A1 (en) * | 2006-03-13 | 2007-09-13 | Kuo-Kuei Fu | Method for applying T-shaped photo-resist pattern to fabricate a wiring pattern with small structural dimensions |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
CN107180925A (en) * | 2017-07-20 | 2017-09-19 | 京东方科技集团股份有限公司 | The preparation method of array base palte and the preparation method of display device |
CN107180925B (en) * | 2017-07-20 | 2019-07-16 | 京东方科技集团股份有限公司 | The production method of the production method and display device of array substrate |
US10546905B2 (en) | 2017-07-20 | 2020-01-28 | Boe Technology Group Co., Ltd. | Method for manufacturing array substrate and method for manufacturing display device |
CN110518147A (en) * | 2019-08-30 | 2019-11-29 | 京东方科技集团股份有限公司 | Display panel and its manufacturing method, display device |
Also Published As
Publication number | Publication date |
---|---|
TW453612U (en) | 2001-09-01 |
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AS | Assignment |
Owner name: RITEK CORPORATION, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LU, TIEN-RONG;REEL/FRAME:011114/0141 Effective date: 20000502 |
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Owner name: RITEK DISPLAY TECHNOLOGY CO., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:RITEK CORPORATION;REEL/FRAME:011426/0647 Effective date: 20001218 |
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Owner name: RITDISPLAY CORPORATION, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:RITEK DISPLAY TECHNOLOGY CO.;REEL/FRAME:013684/0199 Effective date: 20030103 |
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STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
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Effective date: 20100924 |