WO2008145098A3 - Method for the wet-chemical etching of tio2 thin-films and tio2 particles and etching reagent - Google Patents
Method for the wet-chemical etching of tio2 thin-films and tio2 particles and etching reagent Download PDFInfo
- Publication number
- WO2008145098A3 WO2008145098A3 PCT/DE2008/000875 DE2008000875W WO2008145098A3 WO 2008145098 A3 WO2008145098 A3 WO 2008145098A3 DE 2008000875 W DE2008000875 W DE 2008000875W WO 2008145098 A3 WO2008145098 A3 WO 2008145098A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- tio2
- films
- etching
- particles
- reagent
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2456—Coating containing TiO2
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
- C01G23/047—Titanium dioxide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
- C03C17/256—Coating containing TiO2
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/212—TiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
The invention relates to a method and an etching reagent for the wet-chemical etching of TiO2 thin-films and TiO2 particles that permits a defined removal of the TiO2 thin-film and a reduction of the particle size. The method comprises the steps: production of an etching reagent with a pH value greater than 13, said reagent containing a base with a concentration of > 0.1 mol, selected from the bases NH4OH, NaOH, KOH or mixtures of the same and H2O2 with a smaller concentration than that of the base; setting of a temperature that is equal to or greater than the ambient temperature; immersion of the TiO2 thin-films and TiO2 particles in the etching reagent and steeping of the layers of the TiO2 thin-films and particles; said films and particles are then rinsed with distilled water and dried. To maintain the initial composition of the etching reagent, H2O2 is added during the etching process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08758115A EP2164813A2 (en) | 2007-05-30 | 2008-05-23 | Method for the wet-chemical etching of tio2 thin-films and tio2 particles and etching reagent |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007025136.1 | 2007-05-30 | ||
DE200710025136 DE102007025136A1 (en) | 2007-05-30 | 2007-05-30 | Process for the wet-chemical etching of TiO 2 thin films and TiO 2 particles and etchants |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008145098A2 WO2008145098A2 (en) | 2008-12-04 |
WO2008145098A3 true WO2008145098A3 (en) | 2009-02-12 |
Family
ID=39941784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2008/000875 WO2008145098A2 (en) | 2007-05-30 | 2008-05-23 | Method for the wet-chemical etching of tio2 thin-films and tio2 particles and etching reagent |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2164813A2 (en) |
DE (1) | DE102007025136A1 (en) |
WO (1) | WO2008145098A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103688600A (en) * | 2011-07-18 | 2014-03-26 | 默克专利股份有限公司 | Structuring antistatic and antireflection coatings and corresponding stacked layers |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0710606A (en) * | 1993-06-29 | 1995-01-13 | Asahi Glass Co Ltd | Etching of heat-reflective glass |
WO2001058250A1 (en) * | 2000-02-11 | 2001-08-16 | H. Weterings B.V. | Pane provided with a coating which prevents deposits and/or damage, and a process and device for its production |
US20040002430A1 (en) * | 2002-07-01 | 2004-01-01 | Applied Materials, Inc. | Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use |
US20060037942A1 (en) * | 2004-08-17 | 2006-02-23 | Seong-Kyu Yun | Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry |
US20070015372A1 (en) * | 2005-07-12 | 2007-01-18 | Samsung Electronics Co., Ltd. | Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2334770A1 (en) * | 1975-12-09 | 1977-07-08 | Radiotechnique Compelec | METHOD OF ATTACKING AN OXIDIZABLE METAL LAYER SERVING AS A PHOTOGRAVURE MASK |
DE4110595C1 (en) | 1991-04-02 | 1992-11-26 | Thyssen Edelstahlwerke Ag, 4000 Duesseldorf, De | Wet-chemical removal of hard coatings from workpiece surfaces - comprises using hydrogen peroxide soln. stabilised by complex former e.g. potassium-sodium tartrate-tetra:hydrate |
US5223081A (en) * | 1991-07-03 | 1993-06-29 | Doan Trung T | Method for roughening a silicon or polysilicon surface for a semiconductor substrate |
DE4339502C2 (en) | 1993-11-24 | 1999-02-25 | Thoene Carl Stefan | Stripping solution for the wet chemical removal of hard material layers and processes for their application |
-
2007
- 2007-05-30 DE DE200710025136 patent/DE102007025136A1/en not_active Withdrawn
-
2008
- 2008-05-23 EP EP08758115A patent/EP2164813A2/en not_active Ceased
- 2008-05-23 WO PCT/DE2008/000875 patent/WO2008145098A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0710606A (en) * | 1993-06-29 | 1995-01-13 | Asahi Glass Co Ltd | Etching of heat-reflective glass |
WO2001058250A1 (en) * | 2000-02-11 | 2001-08-16 | H. Weterings B.V. | Pane provided with a coating which prevents deposits and/or damage, and a process and device for its production |
US20040002430A1 (en) * | 2002-07-01 | 2004-01-01 | Applied Materials, Inc. | Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use |
US20060037942A1 (en) * | 2004-08-17 | 2006-02-23 | Seong-Kyu Yun | Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry |
US20070015372A1 (en) * | 2005-07-12 | 2007-01-18 | Samsung Electronics Co., Ltd. | Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same |
Non-Patent Citations (2)
Title |
---|
CHEMICAL ABSTRACTS, AMERICAN CHEMICAL SOCIETY, US, 8 April 1991 (1991-04-08), XP000318354, ISSN: 0009-2258 * |
See also references of EP2164813A2 * |
Also Published As
Publication number | Publication date |
---|---|
EP2164813A2 (en) | 2010-03-24 |
DE102007025136A1 (en) | 2008-12-11 |
WO2008145098A2 (en) | 2008-12-04 |
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