WO2008145098A3 - PROCÉDÉ DE GRAVURE CHIMIQUE EN MILIEU HUMIDE SUR COUCHES MINCES DE TiO2 ET SUR PARTICULES DE TiO2, ET AGENT DE GRAVURE CHIMIQUE - Google Patents
PROCÉDÉ DE GRAVURE CHIMIQUE EN MILIEU HUMIDE SUR COUCHES MINCES DE TiO2 ET SUR PARTICULES DE TiO2, ET AGENT DE GRAVURE CHIMIQUE Download PDFInfo
- Publication number
- WO2008145098A3 WO2008145098A3 PCT/DE2008/000875 DE2008000875W WO2008145098A3 WO 2008145098 A3 WO2008145098 A3 WO 2008145098A3 DE 2008000875 W DE2008000875 W DE 2008000875W WO 2008145098 A3 WO2008145098 A3 WO 2008145098A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- tio2
- films
- etching
- particles
- reagent
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2456—Coating containing TiO2
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
- C01G23/047—Titanium dioxide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
- C03C17/256—Coating containing TiO2
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/212—TiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Abstract
La présente invention concerne un procédé et un agent de gravure pour gravure chimique en milieu humide de couches minces et de particules de TiO2, permettant un enlèvement défini de matière de la couche mince de TiO2, voire une diminution de calibre particulaire. Le procédé comporte plusieurs opérations. On commence par préparer un agent de gravure d'un pH supérieur à 13 et contenant à une concentration supérieure à 0,1 mole une base prise dans le groupe NH4OH, NaOH et KOH ou l'un de leurs mélanges, et H2O2 à une concentration inférieure à celle de la base. On établit une température au moins égale à la température ambiante. On plonge les couches minces ou les particules de TiO2 dans l'agent de gravure et on les y laisse tremper pendant une durée qui est fonction de la température et de la composition de l'agent de gravure. On retire du bain de gravure les couches minces ou les particules de TiO2 gravées. On les rince à l'eau distillée et on les fait sécher. Pour conserver la composition initiale de l'agent de gravure, on ajoute du H2O2 pendant le traitement de gravure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08758115A EP2164813A2 (fr) | 2007-05-30 | 2008-05-23 | PROCÉDÉ DE GRAVURE CHIMIQUE EN MILIEU HUMIDE SUR COUCHES MINCES DE TiO2 ET SUR PARTICULES DE TiO2, ET AGENT DE GRAVURE CHIMIQUE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007025136.1 | 2007-05-30 | ||
DE200710025136 DE102007025136A1 (de) | 2007-05-30 | 2007-05-30 | Verfahren zum nasschemischen Ätzenvon TiO2-Dünnschichten und TiO2-Partikeln sowie Ätzmittel |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008145098A2 WO2008145098A2 (fr) | 2008-12-04 |
WO2008145098A3 true WO2008145098A3 (fr) | 2009-02-12 |
Family
ID=39941784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2008/000875 WO2008145098A2 (fr) | 2007-05-30 | 2008-05-23 | PROCÉDÉ DE GRAVURE CHIMIQUE EN MILIEU HUMIDE SUR COUCHES MINCES DE TiO2 ET SUR PARTICULES DE TiO2, ET AGENT DE GRAVURE CHIMIQUE |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2164813A2 (fr) |
DE (1) | DE102007025136A1 (fr) |
WO (1) | WO2008145098A2 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2735216A1 (fr) * | 2011-07-18 | 2014-05-28 | Merck Patent GmbH | Formation de structures sur des couches antistatiques et anti-réfléchissantes et sur des couches empilées correspondantes |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0710606A (ja) * | 1993-06-29 | 1995-01-13 | Asahi Glass Co Ltd | 熱線反射ガラスのエッチング方法 |
WO2001058250A1 (fr) * | 2000-02-11 | 2001-08-16 | H. Weterings B.V. | Panneau comprenant un revetement empechant la formation de depots et/ou protegeant contre les dommages, et son procede et son dispositif de production |
US20040002430A1 (en) * | 2002-07-01 | 2004-01-01 | Applied Materials, Inc. | Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use |
US20060037942A1 (en) * | 2004-08-17 | 2006-02-23 | Seong-Kyu Yun | Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry |
US20070015372A1 (en) * | 2005-07-12 | 2007-01-18 | Samsung Electronics Co., Ltd. | Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2334770A1 (fr) * | 1975-12-09 | 1977-07-08 | Radiotechnique Compelec | Procede d'attaque d'une couche metallique oxydable servant de masque de photogravure |
DE4110595C1 (en) | 1991-04-02 | 1992-11-26 | Thyssen Edelstahlwerke Ag, 4000 Duesseldorf, De | Wet-chemical removal of hard coatings from workpiece surfaces - comprises using hydrogen peroxide soln. stabilised by complex former e.g. potassium-sodium tartrate-tetra:hydrate |
US5223081A (en) * | 1991-07-03 | 1993-06-29 | Doan Trung T | Method for roughening a silicon or polysilicon surface for a semiconductor substrate |
DE4339502C2 (de) | 1993-11-24 | 1999-02-25 | Thoene Carl Stefan | Entschichtungslösung zum naßchemischen Entfernen von Hartstoffschichten und Verfahren zu deren Anwendung |
-
2007
- 2007-05-30 DE DE200710025136 patent/DE102007025136A1/de not_active Withdrawn
-
2008
- 2008-05-23 WO PCT/DE2008/000875 patent/WO2008145098A2/fr active Application Filing
- 2008-05-23 EP EP08758115A patent/EP2164813A2/fr not_active Ceased
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0710606A (ja) * | 1993-06-29 | 1995-01-13 | Asahi Glass Co Ltd | 熱線反射ガラスのエッチング方法 |
WO2001058250A1 (fr) * | 2000-02-11 | 2001-08-16 | H. Weterings B.V. | Panneau comprenant un revetement empechant la formation de depots et/ou protegeant contre les dommages, et son procede et son dispositif de production |
US20040002430A1 (en) * | 2002-07-01 | 2004-01-01 | Applied Materials, Inc. | Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use |
US20060037942A1 (en) * | 2004-08-17 | 2006-02-23 | Seong-Kyu Yun | Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry |
US20070015372A1 (en) * | 2005-07-12 | 2007-01-18 | Samsung Electronics Co., Ltd. | Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same |
Non-Patent Citations (2)
Title |
---|
CHEMICAL ABSTRACTS, AMERICAN CHEMICAL SOCIETY, US, 8 April 1991 (1991-04-08), XP000318354, ISSN: 0009-2258 * |
See also references of EP2164813A2 * |
Also Published As
Publication number | Publication date |
---|---|
WO2008145098A2 (fr) | 2008-12-04 |
EP2164813A2 (fr) | 2010-03-24 |
DE102007025136A1 (de) | 2008-12-11 |
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