WO2009069712A1 - Blocked isocyanato bearing silicon containing composition for the formation of resist undercoat - Google Patents

Blocked isocyanato bearing silicon containing composition for the formation of resist undercoat Download PDF

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Publication number
WO2009069712A1
WO2009069712A1 PCT/JP2008/071577 JP2008071577W WO2009069712A1 WO 2009069712 A1 WO2009069712 A1 WO 2009069712A1 JP 2008071577 W JP2008071577 W JP 2008071577W WO 2009069712 A1 WO2009069712 A1 WO 2009069712A1
Authority
WO
WIPO (PCT)
Prior art keywords
atom
resist undercoat
isocyanato
linkage
integer
Prior art date
Application number
PCT/JP2008/071577
Other languages
French (fr)
Japanese (ja)
Inventor
Makoto Nakajima
Yuta Kanno
Wataru Shibayama
Original Assignee
Nissan Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to JP2009543854A priority Critical patent/JP5252234B2/en
Priority to KR1020107014591A priority patent/KR101524712B1/en
Priority to CN200880118089.4A priority patent/CN101878451B/en
Publication of WO2009069712A1 publication Critical patent/WO2009069712A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Abstract

[PROBLEMS] To provide a resist undercoat forming composition for use in lithography which can form a resist undercoat usable as hard mask or antireflection film. [MEANS FOR SOLVING PROBLEMS] A resist undercoat forming composition for use in lithography which comprises a hydrolyzable organosilane containing an isocyanato group or a blocked isocyanato group, a hydrolyzate of the same, or a hydrolytic condensate thereof, wherein the hydrolyzable organosilane is one represented by the general formula (1): [Chemical formula 1] (1) wherein R1 is isocyanato, blocked isocyanato, or an organic group containing either, where the end N or C atom is bonded to the Si atom to form an Si-N linkage or an Si-C linkage; R2 is alkyl, aryl, halogenated alkyl, halogenated aryl, alkenyl, or an organic group bearing epoxy, acryloyl, methacryloyl, mercapto, amino or cyano, where the end C atom is bonded to the Si atom to form an Si-C linkage; R3 is alkoxy, acyloxy or halogeno; a is an integer of 1 or 2; and b is an integer of 0 or 1 with the proviso that the sum of a and b is an integer of 1 or 2.
PCT/JP2008/071577 2007-11-30 2008-11-27 Blocked isocyanato bearing silicon containing composition for the formation of resist undercoat WO2009069712A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009543854A JP5252234B2 (en) 2007-11-30 2008-11-27 Silicon-containing resist underlayer film forming composition having blocked isocyanate groups
KR1020107014591A KR101524712B1 (en) 2007-11-30 2008-11-27 Blocked Isocyanato Bearing Silicon Containing Composition for the Formation of Resist Undercoat
CN200880118089.4A CN101878451B (en) 2007-11-30 2008-11-27 Blocked isocyanato bearing silicon containing composition for the formation of resist undercoat

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007311268 2007-11-30
JP2007-311268 2007-11-30
JP2008011115 2008-01-22
JP2008-011115 2008-01-22

Publications (1)

Publication Number Publication Date
WO2009069712A1 true WO2009069712A1 (en) 2009-06-04

Family

ID=40678604

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071577 WO2009069712A1 (en) 2007-11-30 2008-11-27 Blocked isocyanato bearing silicon containing composition for the formation of resist undercoat

Country Status (5)

Country Link
JP (1) JP5252234B2 (en)
KR (1) KR101524712B1 (en)
CN (1) CN101878451B (en)
TW (1) TWI450042B (en)
WO (1) WO2009069712A1 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010532003A (en) * 2007-03-12 2010-09-30 ブルーワー サイエンス アイ エヌ シー． Amine constrained additives for materials used in photolithography processes
CN102405533A (en) * 2009-06-10 2012-04-04 霍尼韦尔国际公司 Anti-reflective coatings for optically transparent substrates
JP2013067798A (en) * 2011-09-21 2013-04-18 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
JP2013173916A (en) * 2011-12-21 2013-09-05 Dow Global Technologies Llc Composition for antireflective coating
WO2013187209A1 (en) * 2012-06-12 2013-12-19 株式会社Adeka Photosensitive composition
WO2014034688A1 (en) * 2012-08-30 2014-03-06 東京応化工業株式会社 Method for modifying substrate surface, modifying film and coating solution used for modification of substrate surface
JP2014157242A (en) * 2013-02-15 2014-08-28 Shin Etsu Chem Co Ltd Composition for forming resist underlayer film and patterning process
WO2019124514A1 (en) * 2017-12-20 2019-06-27 日産化学株式会社 Composition for forming photocurable silicon-containing coating film
JPWO2018143359A1 (en) * 2017-02-03 2019-11-21 日産化学株式会社 Resist underlayer film forming composition comprising a polymer having a structural unit having a urea bond
JP2020041125A (en) * 2018-09-10 2020-03-19 エボニック オペレーションズ ゲーエムベーハー Tin-free catalysis of silane-functional polyurethane crosslinker
WO2021193030A1 (en) * 2020-03-27 2021-09-30 Jsr株式会社 Composition for forming resist underlayer film for electron beam or extreme ultraviolet light lithography, resist underlayer film for electron beam or extreme ultraviolet light lithography, and method for producing semiconductor substrate

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5818026B2 (en) * 2011-01-24 2015-11-18 日産化学工業株式会社 Silicon-containing resist underlayer film forming composition containing diketone structure-containing organic group
CN103718111B (en) * 2011-07-20 2017-06-23 日产化学工业株式会社 The photoetching film-forming composition of titaniferous and silicon
KR102099712B1 (en) 2013-01-15 2020-04-10 삼성전자주식회사 Method of forming a pattern and method of manufacturing a semiconductor device using the same
KR102358183B1 (en) * 2014-05-22 2022-02-04 닛산 가가쿠 가부시키가이샤 Resist underlayer film forming composition for lithography containing polymer that contains blocked isocyanate structure
JP6660023B2 (en) * 2014-11-19 2020-03-04 日産化学株式会社 Silicon-containing resist underlayer film forming composition capable of wet removal
KR102462194B1 (en) * 2014-12-08 2022-11-02 닛산 가가쿠 가부시키가이샤 Resist underlayer film forming composition for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group
SG11201707780TA (en) * 2015-04-07 2017-10-30 Mitsubishi Gas Chemical Co Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
CN109111124A (en) * 2018-09-12 2019-01-01 江苏世泰实验器材有限公司 One kind prevents adhesion coverslip and preparation method thereof
JP6981945B2 (en) * 2018-09-13 2021-12-17 信越化学工業株式会社 Pattern formation method

Citations (4)

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Publication number Priority date Publication date Assignee Title
WO2000001752A1 (en) * 1998-07-03 2000-01-13 Clariant International Ltd. Composition for light absorption film formation containing blocked isocyanate compound and antireflection film formed therefrom
JP2003122018A (en) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd Surface treating agent for chemically amplifying resist pattern and method for forming pattern
JP2005352104A (en) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd Antireflection film material, method for producing the same, antireflection film using the same and pattern formation
JP2007178455A (en) * 2005-12-26 2007-07-12 Tokyo Ohka Kogyo Co Ltd Composition for resist underlay film, and resist underlay film and method for forming pattern on substrate both using composition

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI388876B (en) * 2003-12-26 2013-03-11 Fujifilm Corp Antireflection film, polarizing plate, method for producing them, liquid crystal display element, liquid crystal display device, and image display device
JP2007192875A (en) * 2006-01-17 2007-08-02 Tokyo Ohka Kogyo Co Ltd Underlay film forming material, layered body and pattern forming method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000001752A1 (en) * 1998-07-03 2000-01-13 Clariant International Ltd. Composition for light absorption film formation containing blocked isocyanate compound and antireflection film formed therefrom
JP2003122018A (en) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd Surface treating agent for chemically amplifying resist pattern and method for forming pattern
JP2005352104A (en) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd Antireflection film material, method for producing the same, antireflection film using the same and pattern formation
JP2007178455A (en) * 2005-12-26 2007-07-12 Tokyo Ohka Kogyo Co Ltd Composition for resist underlay film, and resist underlay film and method for forming pattern on substrate both using composition

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010532003A (en) * 2007-03-12 2010-09-30 ブルーワー サイエンス アイ エヌ シー． Amine constrained additives for materials used in photolithography processes
US8784985B2 (en) 2009-06-10 2014-07-22 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
CN102405533A (en) * 2009-06-10 2012-04-04 霍尼韦尔国际公司 Anti-reflective coatings for optically transparent substrates
JP2013067798A (en) * 2011-09-21 2013-04-18 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
JP2013173916A (en) * 2011-12-21 2013-09-05 Dow Global Technologies Llc Composition for antireflective coating
JPWO2013187209A1 (en) * 2012-06-12 2016-02-04 株式会社Adeka Photosensitive composition
WO2013187209A1 (en) * 2012-06-12 2013-12-19 株式会社Adeka Photosensitive composition
WO2014034688A1 (en) * 2012-08-30 2014-03-06 東京応化工業株式会社 Method for modifying substrate surface, modifying film and coating solution used for modification of substrate surface
JPWO2014034688A1 (en) * 2012-08-30 2016-08-08 東京応化工業株式会社 Substrate surface modification method, modified film, and coating solution used for substrate surface modification
JP2014157242A (en) * 2013-02-15 2014-08-28 Shin Etsu Chem Co Ltd Composition for forming resist underlayer film and patterning process
JPWO2018143359A1 (en) * 2017-02-03 2019-11-21 日産化学株式会社 Resist underlayer film forming composition comprising a polymer having a structural unit having a urea bond
JP7128447B2 (en) 2017-02-03 2022-08-31 日産化学株式会社 Resist underlayer film-forming composition containing polymer having structural unit having urea bond
WO2019124514A1 (en) * 2017-12-20 2019-06-27 日産化学株式会社 Composition for forming photocurable silicon-containing coating film
JPWO2019124514A1 (en) * 2017-12-20 2021-01-14 日産化学株式会社 Photocurable Silicon-Containing Coating Film Forming Composition
JP7315900B2 (en) 2017-12-20 2023-07-27 日産化学株式会社 Photocurable silicon-containing coating film-forming composition
JP2020041125A (en) * 2018-09-10 2020-03-19 エボニック オペレーションズ ゲーエムベーハー Tin-free catalysis of silane-functional polyurethane crosslinker
WO2021193030A1 (en) * 2020-03-27 2021-09-30 Jsr株式会社 Composition for forming resist underlayer film for electron beam or extreme ultraviolet light lithography, resist underlayer film for electron beam or extreme ultraviolet light lithography, and method for producing semiconductor substrate

Also Published As

Publication number Publication date
KR101524712B1 (en) 2015-06-01
KR20100099240A (en) 2010-09-10
CN101878451B (en) 2013-04-24
CN101878451A (en) 2010-11-03
TW200941145A (en) 2009-10-01
TWI450042B (en) 2014-08-21
JPWO2009069712A1 (en) 2011-04-14
JP5252234B2 (en) 2013-07-31

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