WO2012063767A1 - 有機薄膜形成用固形物又は油状物を用いた有機薄膜積層体製造方法 - Google Patents
有機薄膜形成用固形物又は油状物を用いた有機薄膜積層体製造方法 Download PDFInfo
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- WO2012063767A1 WO2012063767A1 PCT/JP2011/075567 JP2011075567W WO2012063767A1 WO 2012063767 A1 WO2012063767 A1 WO 2012063767A1 JP 2011075567 W JP2011075567 W JP 2011075567W WO 2012063767 A1 WO2012063767 A1 WO 2012063767A1
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- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- 125000004674 methylcarbonyl group Chemical group CC(=O)* 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
- 125000006216 methylsulfinyl group Chemical group [H]C([H])([H])S(*)=O 0.000 description 1
- 125000004170 methylsulfonyl group Chemical group [H]C([H])([H])S(*)(=O)=O 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000006606 n-butoxy group Chemical group 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000003935 n-pentoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 125000001038 naphthoyl group Chemical group C1(=CC=CC2=CC=CC=C12)C(=O)* 0.000 description 1
- 125000005146 naphthylsulfonyl group Chemical group C1(=CC=CC2=CC=CC=C12)S(=O)(=O)* 0.000 description 1
- 125000005029 naphthylthio group Chemical group C1(=CC=CC2=CC=CC=C12)S* 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 125000005981 pentynyl group Chemical group 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000006678 phenoxycarbonyl group Chemical group 0.000 description 1
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000003170 phenylsulfonyl group Chemical group C1(=CC=CC=C1)S(=O)(=O)* 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 125000002568 propynyl group Chemical group [*]C#CC([H])([H])[H] 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 125000000246 pyrimidin-2-yl group Chemical group [H]C1=NC(*)=NC([H])=C1[H] 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000005920 sec-butoxy group Chemical group 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 239000011973 solid acid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 125000005415 substituted alkoxy group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- AXNJHBYHBDPTQF-UHFFFAOYSA-N trimethoxy(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](OC)(OC)OC AXNJHBYHBDPTQF-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/32—Post-polymerisation treatment
- C08G77/34—Purification
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
- C08G77/08—Preparatory processes characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/80—Processes for incorporating ingredients
Definitions
- the present invention relates to a method for producing a solid or oily material used for forming an organic thin film laminate, and a method for producing an organic thin film laminate using them.
- the surface of a substrate made of glass, metal, plastics, ceramics or the like is modified in various fields according to the purpose.
- a fluorine-containing silane coupling agent for example, in order to impart water repellency and oil repellency to the surface of glass or plastics, there may be mentioned those coated with a fluorine-containing silane coupling agent.
- Organometallic compounds such as fluorine-containing silane coupling agents form a film by hydrolytic condensation polymerization. In the present invention, such a film is referred to as an organometallic thin film.
- Patent Documents 1 to 3 disclose a method for producing a chemically adsorbed film that has high peel resistance and transparency and does not impair the gloss of the substrate surface and the transparency of the substrate.
- Patent Document 4 a mixed solution containing at least an alkoxysilane surfactant, a non-aqueous solvent containing no active hydrogen, and a silanol condensation catalyst is brought into contact with the substrate surface and covalently bonded via a siloxane bond.
- a method of forming a chemisorbed film is disclosed.
- Non-Patent Document 1 discloses a method of forming a crystalline monomolecular film by developing an organic solvent solution of a silane surfactant on the surface of a silicon wafer to which purified water is dropped.
- Patent Documents 5 and 6 disclose a water-repellent coating comprising a monomolecular layer using a hydrolyzed monomer or polymer of a fluoroalkyl group-containing silane compound hydrolyzed under an acid catalyst. Has been disclosed on the surface of a substrate via a silanol group.
- Patent Document 7 discloses that hydrolyzing and condensing an organometallic compound using an acid catalyst and a specific polar solvent has an OH group and a completely hydrolyzable group derived from the organometallic compound.
- a method of producing a condensate that remains moderately without decomposition and contains a condensate having a low degree of condensation is disclosed.
- Non-Patent Document 2 it is described that white powder is obtained by hydrolytic condensation of triethoxyalkylsilane, but in the same document, this is dissolved in an organic solvent and used as a liquid for forming an organic thin film. What is possible is not disclosed.
- each of the above methods produces a solution for forming an organic thin film and stores the solution as it is, so that there is a problem that components for forming an organic thin film are precipitated before the thin film is produced.
- This invention is made
- the inventors of the present invention hydrolyzed an organometallic compound under specific conditions to produce a solid or oily condensate, which was then stored as a solid or oily oil. It was found that by dissolving them in an organic solvent and using the solution, a dense monomolecular film or organic thin film with few impurities can be rapidly formed on the substrate, and the present invention has been completed.
- M represents at least one metal atom selected from the group consisting of Si, Ge, Sn, Ti and Zr.
- X represents a hydroxyl group or a hydrolyzable group.
- n an integer of 1 to (m ⁇ 1)
- m represents the valence of M
- R 1 may be the same or different
- X may be the same or different.
- step (A) the method for producing an organic thin film laminate according to any one of (1) to (3), which is hydrolyzed or condensed for at least 48 hours, (5) The method for producing an organic thin film laminate according to any one of (1) to (4), wherein the organic thin film is a monomolecular film.
- (6) Formula (I) [Chemical 2] R 1 n MX mn (I) (Where R 1 represents a hydrocarbon group having 1 to 30 carbon atoms which may have a substituent or a halogenated hydrocarbon group having 1 to 30 carbon atoms which may have a substituent.
- M represents at least one metal atom selected from the group consisting of Si, Ge, Sn, Ti and Zr.
- X represents a hydroxyl group or a hydrolyzable group.
- n represents an integer of 1 to (m ⁇ 1)
- m represents the valence of M
- R 1 may be the same or different
- X may be the same or different.
- a solid or oily product obtained by hydrolyzing and condensing at least one organometallic compound represented by the formula (I) in a lower alcohol solvent in the presence of 0.5 to 5% by mass of water and an acid in the reaction solution.
- a method for producing a solid or oily substance for forming an organic thin film (7) Formula (I) [Chemical formula 3] R 1 n MX mn (I) (Where R 1 represents a hydrocarbon group having 1 to 30 carbon atoms which may have a substituent or a halogenated hydrocarbon group having 1 to 30 carbon atoms which may have a substituent. M represents at least one metal atom selected from the group consisting of Si, Ge, Sn, Ti and Zr. X represents a hydroxyl group or a hydrolyzable group.
- n represents an integer of 1 to (m ⁇ 1)
- m represents the valence of M
- R 1 may be the same or different
- X may be the same or different.
- the present invention relates to a method for producing a solid or oily substance for forming an organic thin film, which is hydrolyzed and condensed in the presence of 0.1 to 20 moles of water and an acid to obtain a solid or oily substance.
- the present invention also provides: (8) An organic thin film laminate produced by the method for producing an organic thin film laminate according to any one of (1) to (5), (9)
- the present invention relates to a solid or oily substance for forming an organic thin film produced by the method for producing a solid or oily substance for forming an organic thin film according to (6) or (7).
- a composition for forming an organic thin film can be obtained as a solid or oily material suitable for storage and transportation.
- the solid or oily substance for forming an organic thin film of the present invention can be stored for at least one year at room temperature. Further, the solid or oily substance for forming the organic thin film is dissolved in an organic solvent at the time of forming the organic thin film to form a solution for forming the organic thin film, thereby forming a dense single substance with few impurities on the substrate made of various materials.
- An organic thin film such as a molecular film can be rapidly formed.
- Organometallic compound used in the present invention is a compound represented by the formula (I).
- R 1 n MX mn (I)
- R 1 represents a hydrocarbon group having 1 to 30 carbon atoms which may have a substituent or a halogenated hydrocarbon group having 1 to 30 carbon atoms which may have a substituent.
- M represents at least one metal atom selected from the group consisting of Si, Ge, Sn, Ti and Zr.
- X represents a hydroxyl group or a hydrolyzable group.
- n represents an integer of 1 to (m ⁇ 1)
- m represents the valence of M
- R 1 may be the same or different
- X may be the same or different.
- R 1 The definition of the substituent in formula (I) is as follows.
- Examples of the “hydrocarbon group having 1 to 30 carbon atoms” in R 1 include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, t-butyl group.
- halogenated hydrocarbon group having 1 to 30 carbon atoms means a group in which a hydrogen atom of the hydrocarbon group having 1 to 30 carbon atoms is substituted with a halogen atom.
- a group in which two or more hydrogen atoms in an alkyl group having 1 to 30 carbon atoms are substituted with a halogen atom is preferable.
- the halogen atom means F, Cl, Br or I.
- substituted examples include: carboxyl group; hydroxyl group; amino group; alkyl-substituted amino group such as methylamino group, ethylamino group, dimethylamino group; Group, alkylaminocarbonyl group such as dimethylaminocarbonyl group and ethylaminocarbonyl group; alkoxy group such as methoxy group and ethoxy group; aryloxy group such as phenoxy group and naphthoxy group; alkylcarbonyl such as methylcarbonyl group and ethylcarbonyl group Groups; alkylcarbonyloxy groups such as methylcarbonyloxy group and ethylcarbonyloxy group; arylcarbonyl groups such as benzoyl group and naphthoyl group; arylcarbonyloxy groups such as phenylcarbonyloxy group and naphthylcarbonyloxy group; An alkoxycarbonyl
- R 1 Preferable specific examples of R 1 include, but are not limited to, the following.
- Hydrocarbon groups CH 3 (CH 2 ) 9 —, CH 3 (CH 2 ) 10 —, CH 3 (CH 2 ) 11 —, CH 3 (CH 2 ) 12 —, CH 3 (CH 2 ) 13 —, CH 3 (CH 2 ) 14- , CH 3 (CH 2 ) 15- , CH 3 (CH 2 ) 16- , CH 3 (CH 2 ) 17- , CH 3 (CH 2 ) 18- , CH 3 (CH 2 ) 19 -, CH 3 (CH 2 ) 20 -, CH 3 (CH 2) 21 -, CH 3 (CH 2) 22 -, CH 3 (CH 2) 23 -, CH 3 (CH 2) 24 -, CH 3 (CH 2 ) 25 -etc.
- Halogenated hydrocarbon group CF 3 (CH 2 ) 2 —, CF 3 (CF 2 ) 3 (CH 2 ) 2 —, CF 3 (CF 2 ) 5 (CH 2 ) 2 —, CF 3 (CF 2 ) 7 (CH 2 ) 2 —, CF 3 (CF 2 ) 7 (CH 2 ) 2 — and the like.
- M represents one kind of atom selected from the group consisting of Si, Ge, Sn, Ti and Zr. Among these, a silicon atom is particularly preferable from the viewpoint of availability of raw materials and reactivity.
- the “hydrolyzable group” in X is not particularly limited as long as it is a group that reacts with water and decomposes.
- an optionally substituted alkoxy group having 1 to 6 carbon atoms an optionally substituted acyloxy group; a halogen atom such as F, Cl, Br, or I; an isocyanate group; a cyano group; An amino group; or an amide group.
- alkoxy group having 1 to 6 carbon atoms examples include methoxy group, ethoxy group, n-propoxy group, isopropoxy group, n-butoxy group, sec-butoxy group, t-butoxy group, n-pentyloxy group, n -Hexyloxy group and the like.
- acyloxy group examples include an acetoxy group, a propionyloxy group, an n-propylcarbonyloxy group, an isopropylcarbonyloxy group, an n-butylcarbonyloxy group and the like, an alkylcarbonyloxy group having 1 to 6 carbon atoms; a phenylcarbonyloxy group, And arylcarbonyloxy groups such as naphthylcarbonyloxy group; arylalkylcarbonyloxy groups such as benzylcarbonyloxy group and phenethylcarbonyloxy group.
- substituent “which may have a substituent” examples include a halogen atom, an alkoxy group, an aryloxy group, an aryl group, an alkylthio group, and an arylthio group.
- X is preferably a hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, an acyloxy group, a halogen atom, or an isocyanate group, and more preferably an alkoxy group having 1 to 4 carbon atoms or an acyloxy group.
- n usually represents an integer of 1 to 3.
- n is preferably 1.
- each R 1 may be the same or different, and when (mn) is 2 or more, each X may be the same or different.
- organometallic compound represented by the formula (I) examples include those shown below.
- R 1 is a hydrocarbon group and M is Si are used as representative examples, but the present invention is not limited to these.
- the organic thin film forming solid and oily substance used in the present invention are produced by one of the following two methods.
- (2-1) Production in Lower Alcohol Solvent In this method, the compound represented by the above formula (I) is hydrolyzed and condensed in the lower alcohol solvent in the presence of water and an acid catalyst.
- the lower alcohol is an alcohol having an alkyl group having 1 to 4 carbon atoms, such as methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, tert-butanol, ethylene glycol, propylene glycol, etc. Is mentioned. These can be used individually by 1 type or in mixture of 2 or more types. The amount used is not particularly limited and is 1 to 99% by mass based on the total amount of the reaction solution.
- the amount of water used is 0.5 to 5% by mass in the reaction solution, preferably 1 to 4% by mass, more preferably 1 to 2% by mass.
- the water concentration in the reaction solution is high, the hydrolysis and condensation reaction of the organometallic compound represented by the formula (I) proceeds excessively, and the solubility of the product is extremely lowered.
- the amount of water used is too small, the hydrolysis and condensation reaction proceed slowly. It is desirable that the hydrolysis product of the present invention has a hydroxy group generated by hydrolysis and that the hydrolyzable group remains appropriately.
- the acid catalyst examples include mineral acids such as hydrochloric acid, sulfuric acid, nitric acid, hydroiodic acid and hydrobromic acid, organic acids such as trifluoroacetic acid, p-toluenesulfonic acid and methanesulfonic acid, preferably pKa ⁇ 0 acids are mentioned.
- the amount of the mineral acid and organic acid used is not particularly limited as long as it does not affect the physical properties of the organic metal thin film to be formed, but is used in an amount of 0.01 to 1 mol with respect to 1 mol of the organic metal compound.
- the amount of the solid acid used is not particularly limited as long as it does not affect the physical properties of the organic thin film to be formed. However, it is used in an amount of 0.05 to 20% by mass with respect to the organometallic compound.
- the reaction temperature varies depending on the solvent, and varies from 0 ° C. to the boiling point of the solvent (for example, 65 ° C. in the case of methanol).
- the reaction time varies depending on the purpose, and is from 1 minute to 100 days. It is preferable to carry out until separation. Specifically, it is preferably carried out for at least 48 hours. When the reaction time is short, the remaining amount of the unreacted organometal is large, and the dimer is larger than the trimer or more. When reaction time becomes long, an unreacted organometallic compound will lose
- the degree of condensation of the obtained condensate increases as the reaction time elapses. That is, at the beginning of the reaction, an unreacted organometallic compound remains and the dimer is more than the trimer. Thereafter, as time elapses, the unreacted organometallic compound almost disappears, the dimer decreases, and the condensate of trimer or higher increases.
- the condensate of trimer or higher is often cyclic.
- a solid or oily substance is produced and settled as it condenses.
- the solid or oily substance can be separated by a method such as filtration or liquid separation.
- the solvent used in the hydrolytic condensation is not particularly limited as long as the condensate of the present invention can be produced.
- tetrahydrofuran (THF), tetrahydropyran (THP), cyclopentyl methyl ether, 1,2-diethyl is used.
- Aliphatic ethers such as ethoxyethane or aliphatic ketones such as acetone, methyl ethyl ketone, and methyl isobutyl ketone are preferred.
- alicyclic ethers are preferable, and tetrahydrofuran (THF) or tetrahydropyran (THP) is particularly preferable.
- the amount used is not particularly limited, but is usually 1 to 99% by mass based on the total amount of the reaction solution.
- the amount of water used is 0.1 to 20 moles, preferably 0.5 to 6 moles, more preferably 1 to 4 moles per mole of the organometallic compound represented by the formula (II). .
- the acid catalyst, reaction temperature, and reaction time can be selected as described above.
- a solution of the condensate obtained by hydrolysis or a dispersion liquid in which the condensate is precipitated are concentrated, concentrated to dryness, filtered, separated, extracted, or a combination of them to obtain a solid or oily product.
- the reaction product of the substance is obtained.
- the condensation reaction product obtained by the above method (2) is a hydrolysis product, partial hydrolysis product and / or condensate thereof of the compound represented by (I) The partial hydrolysis product.
- the presence and ratio of organometallic compounds having different degrees of polymerization can be determined, for example, from the abundance ratio between the peak position and area in GPC (gel permeation chromatography).
- the presence and ratio of organometallic compounds having different numbers of OH groups can be determined, for example, from the peak position and abundance ratio of HPLC (High Performance Liquid Chromatography).
- a hydrolysis degree can also be calculated
- the solution for forming an organic thin film is a solution prepared so as to be brought into contact with a substrate, and forms an organic thin film such as an organometallic compound. It means a liquid in which a substance to be contained is contained in a solvent.
- the condensate in the present invention is produced from an organometallic compound represented by the formula (I)
- an unreacted organometallic compound represented by the formula (I) may be present in the solvent.
- the organic thin film forming solution of the present invention is prepared by stirring and mixing a condensate solid or oil produced by the method described in (2) above with an organic solvent. . Finally, the total amount of the organometallic compound contained in the organic thin film forming solution is 0.01 to 20% by mass, preferably 0.1 to 5% by mass.
- the organic solvent used for preparing the organic thin film forming solution include a hydrocarbon solvent, a fluorocarbon solvent, and a silicone solvent.
- a hydrocarbon solvent is preferable, and a boiling point is 100 to 250.
- a hydrocarbon solvent at 0 ° C. is particularly preferred.
- n-hexane, cyclohexane, benzene, toluene, xylene, SOLVESSO (registered trademark) 150 product of ExxonMobil
- petroleum naphtha solvent naphtha
- petroleum ether petroleum benzine
- isoparaffin normal paraffin, decalin, industrial gasoline, kerosene, hydrocarbon solvents ligroin
- Freon-based solvents such as Cl (CF 2 CFCl) 3 Cl, Fluorinert (product of 3M, registered trademark), Afludo (product of Asahi Glass) Fluoride etc.
- Examples thereof include: carbon-based solvents; fluorine-based solvents such as Novec HFE 7200, 7300, and 7600 (manufactured by 3M Company, registered trademark); and silicone-based solvents such as dimethyl silicone, phenyl silicone, alkyl-modified silicone, and polyether silicone. These solvents can be used alone or in combination of two or more.
- the stirring temperature of the mixture is usually ⁇ 100 ° C. to + 100 ° C., preferably ⁇ 20 ° C. to + 50 ° C.
- the stirring time is usually several minutes to several hours. In this case, it is also preferable to perform ultrasonic treatment in order to obtain a uniform solution for forming an organic thin film.
- precipitates containing metal oxides and the like may be produced, but impurities such as these precipitates are used to obtain a dense monomolecular organic thin film without impurities. It is preferable to remove it here. Precipitates can be easily removed by operations such as filtration and decanting.
- the solution for forming an organic thin film of the present invention is excellent in storage stability, and a good organic thin film can be formed even after sealed storage at room temperature (20 to 30 ° C.) for 40 to 60 days.
- Organic thin film of the present invention can be prepared on the surface of the substrate by bringing the organic thin film forming solution obtained as described above into contact with the substrate.
- a substrate having active hydrogen on the surface is preferable.
- Specific examples include metals such as aluminum, copper, nickel, and stainless steel; silicon; ceramics; glass; plastic; paper; natural fibers or synthetic fibers; leather;
- the surface of the substrate can be treated in advance in a plasma atmosphere containing oxygen, or a hydrophilic group can be introduced by corona treatment.
- the hydrophilic group is preferably a hydroxyl group (—OH), but may be a functional group having active hydrogen such as —COOH, —CHO, ⁇ NH, —NH 2 or the like.
- the surface of this substrate is previously contacted with Si (OR) 4 or its hydrolysis condensate, and then subjected to a dealcoholization reaction as necessary, or After contacting SiCl 4 , SiHCl 3 , SiH 2 Cl 2 or Cl— (SiCl 2 O) c—SiCl 3 (where c represents 0 or a natural number), the surface is subjected to a dehydrochlorination reaction. It is also possible to form a silica underlayer having active hydrogen.
- the method for bringing the organic thin film forming solution of the present invention into contact with the substrate surface is not particularly limited, and a known method can be used. Specific examples include a dipping method, a spin coating method, a spray method, a roller coating method, a Meyer bar method, a screen printing method, a brush coating method, and the like. Among these, the dipping method is preferable.
- the temperature at which the organic thin film forming solution of the present invention is brought into contact with the substrate surface is not particularly limited as long as the temperature of the solution of the present invention can maintain stability. Usually, it can be carried out in the range from room temperature to the reflux temperature of the solvent used for preparing the solution. In order to obtain a temperature suitable for contact, the organic thin film forming solution of the present invention may be heated, or the substrate itself may be heated.
- ultrasonic waves can be used to promote film formation.
- the step of contacting the substrate surface may be performed for a long time at a time, or a short-time coating may be performed in several times.
- a cleaning step can be provided in order to remove excess reagents, impurities, etc. adhering to the film surface.
- the cleaning method is not particularly limited as long as it can remove surface deposits. Specifically, a method of immersing the substrate in a solvent capable of dissolving the organometallic compound used; a method of evaporating by leaving it in the atmosphere under vacuum or normal pressure; and blowing an inert gas such as dry nitrogen gas The method of blowing away etc. is mentioned.
- the substrate After contacting or washing the organic thin film forming solution of the present invention on the substrate, it is preferable to heat the substrate in order to stabilize the film formed on the substrate surface.
- the heating temperature can be appropriately selected depending on the stability of the substrate and the formed organic thin film.
- the method of the present invention can be suitably used particularly for the production of monomolecular films. It can also be used as a method of forming a film on the surface by physical adsorption.
- the organic thin film formed according to the present invention is not particularly limited, but is preferably a crystalline organic thin film. It can be confirmed that the organic thin film formed according to the present invention is crystalline by measuring the organic thin film using a thin film X-ray diffractometer.
- the film thickness of the organic thin film formed according to the present invention is approximately equal to the R chain length of the formula (I) in the case of a monomolecular film.
- the organic thin film formed according to the present invention may be a chemical adsorption film, the substrate may not have crystallinity, and the chemical adsorption film may have crystallinity. In this case, the crystallinity may be polycrystalline or single crystal.
- An example of the chemisorbed film is an organic thin film covalently bonded via a metal-oxygen bond.
- the organic thin film formed according to the present invention is preferably a self-assembled film or a self-assembled film.
- the self-assembled film means a film formed with an ordered structure without external forcing.
- organic thin film forming solution of the present invention a dense organic thin film with less impurities can be formed at a higher speed than the conventional one regardless of the type of the substrate.
- Such organic thin films are used for forming design patterns for electrical devices and the like, and for heat resistance, weather resistance, wear resistance ultrathin films for electronics products, especially electrical appliances, automobiles, industrial equipment, mirrors, spectacle lenses, etc. It can be applied very easily to equipment that requires coating. In addition, it is also useful as a mold release agent for molds and the like.
- Methanol (58.35 g) is added to octadecyltrimethoxysilane (hereinafter referred to as ODS, purity 98 mass% or more, 1.91 g) and stirred, and 0.1N hydrochloric acid (0.85 g) is added thereto (in the reaction solution).
- ODS octadecyltrimethoxysilane
- 0.1N hydrochloric acid (0.85 g) is added thereto (in the reaction solution).
- the water content was about 1.4% by mass) and stirred at room temperature for 3 days.
- the reaction solution slurry was suction filtered, and the resulting solid was dried under reduced pressure (30 ° C., ⁇ 10 torr) to obtain 1.28 g of a white powder.
- the above white powder (0.184 g) was dissolved in SOLVESSO (registered trademark) 150 (29.82 g) by sonication, allowed to stand overnight at room temperature, and then filtered through a PTFE cartridge filter (Mirex, manufactured by Millipore). Thus, a self-assembled monolayer (SAM) forming solution was obtained.
- SAM self-assembled monolayer
- the Si single crystal wafer subjected to UV ozone treatment was immersed in the SAM forming solution for 3 minutes, washed with NS Clean 100 and dried at 60 ° C. to obtain a SAM film-formed substrate. When the static contact angle on the film formation surface was measured, it showed 109 ° for water and 41 ° for tetradecane.
- the dispersion was allowed to stand at room temperature overnight and then filtered through a PTFE cartridge filter (Mirex, manufactured by Millipore) to obtain a SAM-forming solution.
- the Si single crystal wafer subjected to UV ozone treatment was immersed in the SAM forming solution for 3 minutes, washed with NS Clean 100 and dried at 60 ° C. to obtain a SAM film-formed substrate.
- the film formation activity was low (63 ° for water and 20 ° for tetradecane).
- the white powder (0.307 g) was dissolved in SOLVESSO (registered trademark) 150 (49.69 g) by sonication, allowed to stand overnight at room temperature, and then filtered through a PTFE cartridge filter (Mirex, manufactured by Millipore). Thus, a SAM forming solution was obtained.
- SOLVESSO registered trademark
- a SAM film formation substrate was prepared. The static contact angle on the film formation surface was 110 ° for water and 42 ° for tetradecane.
- Acetonitrile / methanol (1: 1) (25.35 g) was added to ODS (purity 98 mass% or more, 4.78 g) and stirred, and 0.1N hydrochloric acid (0.43 g) was added thereto (in the reaction solution).
- the water content was about 1.4% by mass) and stirred at room temperature for 3 days.
- the reaction solution slurry was filtered with suction, and the obtained solid was dried under reduced pressure (30 ° C., ⁇ 10 torr) to obtain 3.87 g of a white powder.
- a SAM formation solution was prepared and a SAM film formation substrate was prepared.
- the static contact angle on the film formation surface was 110 ° for water and 43 ° for tetradecane.
- Acetonitrile / tetrahydrofuran (1: 1) (25.35 g) was added to ODS (purity 98 mass% or more, 4.78 g) and stirred, and 0.1N hydrochloric acid (0.43 g) was added thereto (in the reaction solution).
- the water content of 1.9 mol per 1 mol of ODS) was stirred at room temperature for 3 days.
- the reaction solution slurry was subjected to suction filtration, and the obtained solid was dried under reduced pressure (30 ° C., ⁇ 10 torr) to obtain 3.85 g of a white powder.
- a SAM formation solution was prepared and a SAM film formation substrate was prepared.
- the static contact angle on the film formation surface was 108 ° for water and 43 ° for tetradecane.
- Tetrahydrofuran 25.35 g was added to ODS (purity 98 mass% or more, 4.78 g) and stirred, and 0.1 N hydrochloric acid (0.43 g) was added thereto (the water content in the reaction solution was 1 mol of ODS). The mixture was stirred at room temperature for 3 days. The reaction solution was concentrated to dryness with an evaporator, and the resulting solid was dried under reduced pressure (30 ° C., ⁇ 10 torr) to obtain 3.25 g of a white powder.
- a SAM formation solution was prepared and a SAM film formation substrate was prepared. The static contact angle on the film formation surface was 110 ° for water and 41 ° for tetradecane.
- Examples 1 to 7 in which the water concentration in the reaction solution was 0.5 to 5% by mass were produced compared to Comparative Example 1 in which the water concentration was increased to about 8.5% by mass. It was found that the solubility of the product was good and the film forming activity was high.
- Example 3 As a result of the stability test, it was found that the solid of Example 3 was excellent in stability because the static contact angle, that is, the film-forming activity did not decrease even after storage for 12 months.
- the Si single crystal wafer subjected to UV ozone treatment was immersed in the SAM formation solution for 3 minutes, washed with NS Clean 100 and dried at 60 ° C. to obtain a SAM formation substrate.
- NS Clean 100 washed with NS Clean 100 and dried at 60 ° C. to obtain a SAM formation substrate.
- the static contact angle on the film formation surface was measured, it showed 108 ° for water and 41 ° for tetradecane.
- the white solid (0.48 g) was dissolved in SOLVESSO (registered trademark) 150 (79.52 g) by sonication to obtain a SAM forming solution.
- SOLVESSO registered trademark
- the Si single crystal wafer subjected to UV ozone treatment was immersed in the SAM formation solution for 3 minutes, washed with NS Clean 100 and dried at 60 ° C. to obtain a SAM formation substrate.
- NS Clean 100 was obtained by the static contact angle on the film formation surface was measured, it was 110 ° with water and 40 ° with tetradecane.
- the white solids obtained in Example 8 and Example 9 were stored at room temperature, and stability was confirmed by GPC analysis. The results are shown in Table 2.
- an organic thin film such as a monomolecular film having a high function can be formed anywhere. Can be said to have high utility value.
Abstract
Description
本願は、2010年11月11日に、日本に出願された特願2010-252451号に基づき優先権を主張し、その内容をここに援用する。
含フッ素シラン系カップリング剤などの有機金属化合物は、加水分解縮重合して膜を形成する。本発明ではこのような膜を有機金属薄膜という。
(1)特許文献1~3には、耐剥離性、透明性が高く基板表面の光沢や基板の透明性を損なわない化学吸着膜の製造方法が開示されている。
(2)特許文献4には、少なくともアルコキシシラン系界面活性剤、活性水素を含まない非水系溶媒及びシラノール縮合触媒を含む混合溶液を前記基板表面に接触させて、シロキサン結合を介して共有結合した化学吸着膜を形成する方法が開示されている。
(3)非特許文献1には、精製水を滴下したシリコンウェハー表面にシラン系界面活性剤の有機溶媒溶液を展開して結晶性単分子膜を形成する方法が開示されている。
(4)特許文献5、6には、酸触媒のもとに加水分解させたフルオロアルキル基含有シラン化合物の加水分解物の単量体又は重合体を用いて、単分子層からなる撥水性被膜を、シラノール基を経由して基板表面に固定する方法が開示されている。
(5)特許文献7には、酸触媒と特定の極性溶媒とを用いて有機金属化合物を加水分解縮合することにより、OH基を有すると共に、有機金属化合物に由来する加水分解性基が完全に分解することなく適度に残存し、低縮合度の縮合体を含有する縮合体を作製する方法が開示されている。
なお、非特許文献2には、トリエトキシアルキルシランを加水分解縮合することにより白色粉末を得ることが記載されているが、同文献ではこれを有機溶媒に溶解させて有機薄膜形成用液として使用できることは開示されていない。
本発明はかかる実情に鑑みてなされたものであり、長期間保存可能な有機薄膜形成用組成物及び前記組成物を用いた有機薄膜積層板の製造方法を提供することを課題とする。
(1)工程(A):式(I)
[化1]
R1 nMXm-n (I)
(式中、
R1は、置換基を有していてもよい炭素数1~30の炭化水素基又は置換基を有していてもよい炭素数1~30のハロゲン化炭化水素基を表す。
Mは、Si、Ge、Sn、Ti及びZrからなる群から選ばれる少なくとも1種の金属原子を表す。
Xは、水酸基又は加水分解性基を表す。
nは、1~(m-1)のいずれかの整数を表し、mはMの原子価を表し、nが2以上の場合、R1は、同一または相異なっていてもよく、(m-n)が2以上の場合、Xは同一であっても、相異なっていてもよい。)
で表される少なくとも1種の有機金属化合物を、低級アルコール系溶媒または低級アルコール系溶媒を含む混合溶媒中、反応液中の濃度が、0.5~5質量%の水及び酸の存在下で、加水分解及び/または縮合させる工程、又は、脂肪族エーテル系溶媒及び脂肪族ケトン系溶媒から選ばれる少なくとも1種を含む溶媒であって低級アルコール系溶媒を含まない溶媒中、式(I)で表される有機金属化合物1モルに対して0.1モル~20モルの水及び酸の存在下で、加水分解及び/または縮合させる工程、
工程(B):工程(A)の反応液から析出した固形分、若しくは分離した油状物を分離する、または工程(A)の反応液を濃縮乾固することにより、固形分、または油状物を得る工程、
工程(C):工程(B)で得られた固形物又は油状物を、炭化水素系溶媒、フッ素系溶媒及びシリコン系溶媒からなる群より選ばれる少なくとも1種の溶媒と混合し、必要に応じて不溶分を除去して、有機薄膜形成溶液を得る工程、
工程(D):工程(C)で得られた有機薄膜形成溶液に、基板を接触させ、有機薄膜が積層された基板を製造する工程、
を含む有機薄膜積層板の製造方法に関し、
(2)工程(A)と工程(B)の中間に、前記酸を中和する工程を設けた(1)に記載の有機薄膜積層板の製造方法に関し、
(3)工程(A)において、少なくとも固形分が析出または油状分が分離するまで、加水分解または縮合させる(1)または(2)に記載の有機薄膜積層板の製造方法に関し、
(4)工程(A)において、少なくとも48時間、加水分解または縮合させる(1)~(3)のいずれかに記載の有機薄膜積層板の製造方法に関し、
(5)有機薄膜が、単分子膜である(1)~(4)のいずれかに記載の有機薄膜積層板の製造方法に関する。
また、
(6)式(I)
[化2]
R1 nMXm-n (I)
(式中、
R1は、置換基を有していてもよい炭素数1~30の炭化水素基又は置換基を有していてもよい炭素数1~30のハロゲン化炭化水素基を表す。
Mは、Si、Ge、Sn、Ti及びZrからなる群から選ばれる少なくとも1種の金属原子を表す。
Xは、水酸基又は加水分解性基を表す。
nは、1~(m-1)のいずれかの整数を表し、mはMの原子価を表し、nが2以上の場合、R1は、同一または相異なっていてもよく、(m-n)が2以上の場合、Xは同一であっても、相異なっていてもよい。)
で表される少なくとも1種の有機金属化合物を、低級アルコール系溶媒中、反応液中濃度0.5~5質量%の水、及び酸の存在下で加水分解及び縮合させて固形物又は油状物を得る有機薄膜形成用固形物又は油状物の製造方法に関し、
(7)式(I)
[化3]
R1 nMXm-n (I)
(式中、
R1は、置換基を有していてもよい炭素数1~30の炭化水素基又は置換基を有していてもよい炭素数1~30のハロゲン化炭化水素基を表す。
Mは、Si、Ge、Sn、Ti及びZrからなる群から選ばれる少なくとも1種の金属原子を表す。
Xは、水酸基又は加水分解性基を表す。
nは、1~(m-1)のいずれかの整数を表し、mはMの原子価を表し、nが2以上の場合、R1は、同一または相異なっていてもよく、(m-n)が2以上の場合、Xは同一であっても、相異なっていてもよい。)
で表される少なくとも1種の有機金属化合物を、脂肪族エーテル系溶媒及び脂肪族ケトン系溶媒から選ばれる少なくとも1種を含む溶媒中、式(I)で表される有機金属化合物1モルに対して0.1モル~20モルの水及び酸の存在下で加水分解及び縮合させて固形物又は油状物を得る有機薄膜形成用固形物又は油状物の製造方法に関する。
また、本発明は、
(8)(1)~(5)のいずれかに記載の有機薄膜積層板の製造方法で製造された有機薄膜積層板に関し、
(9)(6)または(7)に記載の有機薄膜形成用固形物又は油状物の製造方法で製造された有機薄膜形成用固形物又は油状物に関する。
また、前記有機薄膜形成用の固形物又は油状物は、有機薄膜形成時に有機溶媒に溶解させて有機薄膜形成用溶液とすることにより、種々の材質からなる基板上に、不純物が少ない緻密な単分子膜等の有機薄膜を迅速に形成することができる。
(1)有機金属化合物
本発明において使用される有機金属化合物は、式(I)で表される化合物である。
[化4]
R1 nMXm-n (I)
式中、R1は、置換基を有していてもよい炭素数1~30の炭化水素基又は置換基を有していてもよい炭素数1~30のハロゲン化炭化水素基を表す。
Mは、Si、Ge、Sn、Ti及びZrからなる群から選ばれる少なくとも1種の金属原子を表す。
Xは、水酸基又は加水分解性基を表す。
nは、1~(m-1)のいずれかの整数を表し、mはMの原子価を表し、nが2以上の場合、R1は、同一または相異なっていてもよく、(m-n)が2以上の場合、Xは同一であっても、相異なっていてもよい。
R1における、「炭素数1~30の炭化水素基」の例としては、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、sec-ブチル基、t-ブチル基、n-ペンチル基、イソペンチル基、ネオペンチル基、t-ペンチル基、n-へキシル基、イソへキシル基、n-ヘプチル基、n-オクチル基、n-デシル基、n-オクタデシル基等のアルキル基;シクロプロピル基、シクロペンチル基、シクロヘキシル基等のシクロアルキル基;ビニル基、プロペニル基、ブテニル基、ペンテニル基、n-デセニル基、n-オクタデセニル基等のアルケニル基;1-シクロブテニル基、2-シクロペンテニル基、3-シクロヘキセニル基等のシクロアルケニル基;エチニル基、プロピニル基、ブチニル基、ペンチニル基、n-デシニル基、n-オクタデシニル基等のアルキニル基;フェニル基、1-ナフチル基、2-ナフチル基等のアリール基;ベンジル基、フェネチル基、1-ナフチルメチル基、2-ナフチルメチル基等のアリールアルキル基等が挙げられる。
ここで、ハロゲン原子は、F、Cl、Br又はIを意味する。
CH3(CH2)9-、CH3(CH2)10-、CH3(CH2)11-、CH3(CH2)12-、CH3(CH2)13-、CH3(CH2)14-、CH3(CH2)15-、CH3(CH2)16-、CH3(CH2)17-、CH3(CH2)18-、CH3(CH2)19-、CH3(CH2)20-、CH3(CH2)21-、CH3(CH2)22-、CH3(CH2)23-、CH3(CH2)24-、CH3(CH2)25-等。
・ハロゲン化炭化水素基
CF3(CH2)2-、CF3(CF2)3(CH2)2-、CF3(CF2)5(CH2)2-、CF3(CF2)7(CH2)2-、CF3(CF2)7(CH2)2-等。
アシルオキシ基の例としては、アセトキシ基、プロピオニルオキシ基、n-プロピルカルボニルオキシ基、イソプロピルカルボニルオキシ基、n-ブチルカルボニルオキシ基等の炭素数1~6のアルキルカルボニルオキシ基;フェニルカルボニルオキシ基、ナフチルカルボニルオキシ基等のアリールカルボニルオキシ基;ベンジルカルボニルオキシ基、フェネチルカルボニルオキシ基等のアリールアルキルカルボニルオキシ基等が挙げられる。
「置換基を有していてもよい」の置換基の例としては、ハロゲン原子、アルコキシ基、アリールオキシ基、アリール基、アルキルチオ基、アリールチオ基が挙げられる。
Xとしては、水酸基、炭素数1~4のアルコキシ基、アシルオキシ基、ハロゲン原子、又はイソシアネート基が好ましく、炭素数1~4のアルコキシ基又はアシルオキシ基がより好ましい。
nが2以上のとき、各R1は同一であっても相異なっていてもよく、(m-n)が2以上のとき、各Xは同一であっても相異なっていてもよい。
また、これらの化合物は1種単独で、あるいは2種以上を組み合わせて用いることができる。
本発明で用いられる有機薄膜形成用固形物及び油状物は、以下の2つの方法のいずれかによって製造される。
(2-1)低級アルコール系溶媒中での製造
上記式(I)で表される化合物を、低級アルコール系溶媒中、水及び酸触媒の存在下に加水分解及び縮合反応を行う方法である。
鉱酸及び有機酸の使用量は、形成する有機金属薄膜の物性に影響を与えない量であれば特に制限されないが、有機金属化合物1モルに対して0.01ミリモル~1モル使用される。一方、固体酸の使用量は、形成する有機薄膜の物性に影響を与えない量であれば特に制限されないが、有機金属化合物に対して0.05~20質量%使用される。
前記方法では、固形物又は油状物が縮合するに伴い生成し沈降する。固形物又は油状物は濾過、分液などの方法により分離することができる。
上記式(I)で表される化合物を、脂肪族エーテル系溶媒又は脂肪族ケトン系溶媒中、水及び酸触媒の存在下に加水分解及び縮合反応を行う方法である。
本方法は、加水分解によって得られた縮合体の溶液もしくは縮合体が沈殿した分散液を濃縮、濃縮乾固、濾過、分液、抽出などの操作もしくはそれらを組み合わせた操作により、固形物又は油状物質の反応生成物を得ることを特徴とする。
安定な有機薄膜形成用固形物又は油状物を得るため、上記(2-1)及び(2-2)の方法において、加水分解または縮合させる工程と、前記工程の反応液から析出した固形分、若しくは分離した油状物を分離する、または前記工程の反応液を濃縮乾固する工程との中間に、用いた酸を中和する工程を設けることが好ましい。具体的には、反応液スラリーに水酸化ナトリウム、水酸化カリウム、水酸化マグネシウム等、アルカリ金属水酸化物もしくはアルカリ土類金属水酸化物、またはピリジン、ジエチルアミン等の有機アミン化合物等を加えて撹拌することにより中和を行う。
上記(2)の方法により得られる縮合反応生成物は、(I)で表される化合物の加水分解生成物、部分加水分解生成物及び/またはそれらの縮合体もしくはそれらの部分加水分解生成物である。
ここで、重合度の異なる有機金属化合物の存在とそれらの割合は、例えば、GPC(ゲルパーミエーションクロマトグラフィー)におけるピーク位置と面積の存在比から求めることができる。また、OH基の数の異なる有機金属化合物の存在とそれらの割合は、例えば、HPLC(高速液体クロマトグラフィー)のピーク位置と存在比から求めることができる。
また、GPCによる縮合度とNMRによる加水分解性基の残存率から加水分解度を求めることもできる。
有機薄膜形成用溶液とは、基材に接触させることができるように調製された溶液のことであり、有機金属化合物等の有機薄膜を形成する物質が溶媒に含有されている液を意味する。
本発明の有機薄膜形成用溶液は、上記(2)に記載の方法により製造した縮合体固形物又は油状物を、有機溶媒と撹拌混合して調製される。
最終的に有機薄膜形成用溶液中に含まれる有機金属化合物の全量は、0.01~20質量%、好ましくは、0.1~5質量%である。
有機薄膜形成用溶液作製のために使用される有機溶媒の例としては、炭化水素系溶媒、フッ化炭素系溶媒、及びシリコーン系溶媒が挙げられ、炭化水素系溶媒が好ましく、沸点が100~250℃の炭化水素系溶媒が特に好ましい。
また、この場合においては、均一な有機薄膜形成用溶液を得るために、超音波処理を施すことも好ましい。
本発明の有機薄膜は、上記のようにして得られた有機薄膜形成用溶液を基板と接触させることにより、前記基板表面に作製することができる。
本発明の有機薄膜形成用溶液を基板上に接触させると、前記有機薄膜形成用溶液中の有機金属化合物が基板表面に吸着され、薄膜が形成される。有機金属化合物が基板表面に吸着される機構の1つとしては、表面に活性水素を有する基板の場合には、有機金属化合物中のOH基が基板表面の活性水素と反応して、基板と強固な化学結合を形成する機構が考えられる。
本発明により形成される有機薄膜は、自己集合膜または自己組織化膜であるのが好ましい。ここで自己集合膜とは、外部からの強制力なしに秩序だった構造を形成してなる膜を意味する。
以下、実施例を用いて本発明をさらに詳細に説明するが、本発明はこれら実施例に限定されない。
上記白色粉末(0.184g)をSOLVESSO(登録商標)150(29.82g)に超音波処理により溶解し、室温で終夜放置した後、PTFE製カートリッジフィルター(マイレクス、ミリポア社製)にて濾過して、自己集合単分子膜(SAM)形成溶液を得た。
UVオゾン処理を行ったSi単結晶ウエハーを、上記SAM形成溶液に3分間浸漬し、NSクリーン100で洗浄後に60℃で乾燥させて、SAM成膜基板を得た。成膜面における静的接触角を測定したところ、水で109°、テトラデカンで41°を示した。
上記白色粉末(0.184g)をSOLVESSO(登録商標)150(29.82g)に超音波処理により溶解しようとしたが、完全には溶けなかった。この分散体を室温で終夜放置した後、PTFE製カートリッジフィルター(マイレクス、ミリポア社製)にて濾過して、SAM形成溶液を得た。
UVオゾン処理を行ったSi単結晶ウエハーを、上記SAM形成溶液に3分間浸漬し、NSクリーン100で洗浄後に60℃で乾燥させて、SAM成膜基板を得た。成膜面における静的接触角を測定したところ、成膜活性は低かった(水で63°、テトラデカンで20°)。
実施例1と同様にして、SAM形成溶液を調製し、SAM成膜基板を作成した。成膜面における静的接触角は、水で109°、テトラデカンで44°を示した。微小角入射X線回折測定(GIXD)結果からODS分子が規則的な分子配列を持つことがわかった。
またX線反射率測定(XRR)の結果、膜厚は2.4nmであった。
上記白色粉末(0.307g)をSOLVESSO(登録商標)150(49.69g)に超音波処理により溶解し、室温で終夜放置した後、PTFE製カートリッジフィルター(マイレクス、ミリポア社製)にて濾過して、SAM形成溶液を得た。
実施例1と同様にして、SAM成膜基板を作成した。成膜面における静的接触角は、水で110°、テトラデカンで42°を示した。
実施例1と同様にして、SAM形成溶液を調製し、SAM成膜基板を作成した。成膜面における静的接触角は、水で110°、テトラデカンで43°を示した。
実施例1と同様にして、SAM形成溶液を調製し、SAM成膜基板を作成した。成膜面における静的接触角は、水で108°、テトラデカンで43°を示した。
実施例1と同様にして、SAM形成溶液を調製し、SAM成膜基板を作成した。成膜面における静的接触角は、水で110°、テトラデカンで41°を示した。
実施例1と同様にして、SAM形成溶液を調製し、SAM成膜基板を作成した。成膜面における静的接触角は、水で107°、テトラデカンで42°を示した。
上記の実施例3で得られた固体10gをポリエチレン製瓶に入れて蓋をし、室温で5日、3ヶ月、6ヶ月及び12ヶ月保管したものを、実施例1と同様にしてSAM溶液を調製し、SAM成膜基板を作成した後、成膜面における静的接触角を測定した。その結果を表1に示す。
得られた固体を減圧乾燥(90℃、<10torr)して、白色粉末A(21.2g)を得た。
上記白色固体(0.48g)をSOLVESSO(登録商標)150(79.52g)に超音波処理により溶解し、SAM形成溶液を得た。
UVオゾン処理を行なったSi単結晶ウエハーを、上記SAM形成溶液に3分間浸漬し、NSクリーン100で洗浄後に60℃で乾燥させて、SAM形成基板を得た。成膜面における静的接触角を測定したところ、水で108°、テトラデカンで41°を示した。
得られた固体を減圧乾燥(90℃、<10torr)して、白色粉末B(20.8g)を得た。
上記白色固体(0.48g)をSOLVESSO(登録商標)150(79.52g)に超音波処理により溶解し、SAM形成溶液を得た。
UVオゾン処理を行なったSi単結晶ウエハーを、上記SAM形成溶液に3分間浸漬し、NSクリーン100で洗浄後に60℃で乾燥させて、SAM形成基板を得た。成膜面における静的接触角を測定したところ、水で110°、テトラデカンで40°を示した。
[安定性試験]
実施例8、及び実施例9で得られた白色固体を常温で保管し、GPC分析により安定性を確認した。その結果を表2に示す。
*GPC条件
・カラム:KF-802/Shodex(分離範囲:150~5000)
・移動相:THF
・流量:1ml/min ・カラム温度:40℃
Claims (9)
- 工程(A):式(I)
[化1]
R1 nMXm-n (I)
(式中、
R1は、置換基を有していてもよい炭素数1~30の炭化水素基又は置換基を有していてもよい炭素数1~30のハロゲン化炭化水素基を表す。
Mは、Si、Ge、Sn、Ti及びZrからなる群から選ばれる少なくとも1種の金属原子を表す。
Xは、水酸基又は加水分解性基を表す。
nは、1~(m-1)のいずれかの整数を表し、mはMの原子価を表し、nが2以上の場合、R1は、同一または相異なっていてもよく、(m-n)が2以上の場合、Xは同一であっても、相異なっていてもよい。)
で表される少なくとも1種の有機金属化合物を、低級アルコール系溶媒または低級アルコール系溶媒を含む混合溶媒中、反応液中の濃度が、0.5~5質量%の水及び酸の存在下で、加水分解及び/または縮合させる工程、又は、脂肪族エーテル系溶媒及び脂肪族ケトン系溶媒から選ばれる少なくとも1種を含む溶媒であって低級アルコール系溶媒を含まない溶媒中、式(I)で表される有機金属化合物1モルに対して0.1モル~20モルの水及び酸の存在下で、加水分解及び/または縮合させる工程、
工程(B):工程(A)の反応液から析出した固形分、若しくは分離した油状物を分離する、または工程(A)の反応液を濃縮乾固することにより、固形分、または油状物を得る工程、
工程(C):工程(B)で得られた固形物又は油状物を、炭化水素系溶媒、フッ素系溶媒及びシリコン系溶媒からなる群より選ばれる少なくとも1種の溶媒と混合し、必要に応じて不溶分を除去して、有機薄膜形成溶液を得る工程、
工程(D):工程(C)で得られた有機薄膜形成溶液に、基板を接触させ、有機薄膜が積層された基板を製造する工程、
を含む有機薄膜積層板の製造方法。 - 工程(A)と工程(B)の中間に、前記酸を中和する工程を設けた請求項1に記載の有機薄膜積層板の製造方法。
- 工程(A)において、少なくとも固形分が析出または油状分が分離するまで、加水分解または縮合させる請求項1または2に記載の有機薄膜積層板の製造方法。
- 工程(A)において、少なくとも48時間、加水分解または縮合させる請求項1~3のいずれかに記載の有機薄膜積層板の製造方法。
- 有機薄膜が、単分子膜である請求項1~4のいずれかに記載の有機薄膜積層板の製造方法。
- 式(I)
[化2]
R1 nMXm-n (I)
(式中、
R1は、置換基を有していてもよい炭素数1~30の炭化水素基又は置換基を有していてもよい炭素数1~30のハロゲン化炭化水素基を表す。
Mは、Si、Ge、Sn、Ti及びZrからなる群から選ばれる少なくとも1種の金属原子を表す。
Xは、水酸基又は加水分解性基を表す。
nは、1~(m-1)のいずれかの整数を表し、mはMの原子価を表し、nが2以上の場合、R1は、同一または相異なっていてもよく、(m-n)が2以上の場合、Xは同一であっても、相異なっていてもよい。)
で表される少なくとも1種の有機金属化合物を、低級アルコール系溶媒中、反応液中濃度0.5~5質量%の水、及び酸の存在下で加水分解及び縮合させて固形物又は油状物を得る有機薄膜形成用固形物又は油状物の製造方法。 - 式(I)
[化3]
R1 nMXm-n (I)
(式中、
R1は、置換基を有していてもよい炭素数1~30の炭化水素基又は置換基を有していてもよい炭素数1~30のハロゲン化炭化水素基を表す。
Mは、Si、Ge、Sn、Ti及びZrからなる群から選ばれる少なくとも1種の金属原子を表す。
Xは、水酸基又は加水分解性基を表す。
nは、1~(m-1)のいずれかの整数を表し、mはMの原子価を表し、nが2以上の場合、R1は、同一または相異なっていてもよく、(m-n)が2以上の場合、Xは同一であっても、相異なっていてもよい。)
で表される少なくとも1種の有機金属化合物を、脂肪族エーテル系溶媒及び脂肪族ケトン系溶媒から選ばれる少なくとも1種を含む溶媒中、式(I)で表される有機金属化合物1モルに対して0.1モル~20モルの水及び酸の存在下で加水分解及び縮合させて固形物又は油状物を得る有機薄膜形成用固形物又は油状物の製造方法。 - 請求項1~5のいずれかに記載の有機薄膜積層板の製造方法で製造された有機薄膜積層板。
- 請求項6または7に記載の有機薄膜形成用固形物又は油状物の製造方法で製造された有機薄膜形成用固形物又は油状物。
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- 2011-11-07 CN CN201510259491.6A patent/CN104858120B/zh not_active Expired - Fee Related
- 2011-11-07 JP JP2012542908A patent/JP5793504B2/ja not_active Expired - Fee Related
- 2011-11-07 EP EP11839917.9A patent/EP2638980B1/en not_active Not-in-force
- 2011-11-07 US US13/881,762 patent/US9309416B2/en not_active Expired - Fee Related
- 2011-11-07 WO PCT/JP2011/075567 patent/WO2012063767A1/ja active Application Filing
- 2011-11-07 KR KR1020137011864A patent/KR20130100165A/ko active Search and Examination
- 2011-11-07 KR KR1020157025081A patent/KR101636222B1/ko active IP Right Grant
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018524157A (ja) * | 2015-06-10 | 2018-08-30 | ピーピージー・インダストリーズ・オハイオ・インコーポレイテッドPPG Industries Ohio,Inc. | 航空機用透明材のための撥水表面処理および航空機用透明材を処理する方法 |
US11292920B2 (en) | 2015-06-10 | 2022-04-05 | Ppg Industries Ohio, Inc. | Water repellant surface treatment for aircraft transparencies and methods of treating aircraft transparencies |
JP2021143220A (ja) * | 2020-03-10 | 2021-09-24 | 信越化学工業株式会社 | オルガノポリシロキサン、コーティング組成物および被覆物品 |
Also Published As
Publication number | Publication date |
---|---|
JP5793504B2 (ja) | 2015-10-14 |
EP2638980A4 (en) | 2014-05-07 |
KR20130100165A (ko) | 2013-09-09 |
EP2638980B1 (en) | 2018-01-10 |
US9309416B2 (en) | 2016-04-12 |
CN104858120B (zh) | 2017-05-31 |
CN104858120A (zh) | 2015-08-26 |
US20130220176A1 (en) | 2013-08-29 |
CN103201049B (zh) | 2016-01-20 |
JPWO2012063767A1 (ja) | 2014-05-12 |
KR101636222B1 (ko) | 2016-07-04 |
CN103201049A (zh) | 2013-07-10 |
KR20150111371A (ko) | 2015-10-05 |
EP2638980A1 (en) | 2013-09-18 |
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