WO2013012587A3 - Semiconductor package resin composition and usage method thereof - Google Patents

Semiconductor package resin composition and usage method thereof Download PDF

Info

Publication number
WO2013012587A3
WO2013012587A3 PCT/US2012/045916 US2012045916W WO2013012587A3 WO 2013012587 A3 WO2013012587 A3 WO 2013012587A3 US 2012045916 W US2012045916 W US 2012045916W WO 2013012587 A3 WO2013012587 A3 WO 2013012587A3
Authority
WO
WIPO (PCT)
Prior art keywords
resin composition
semiconductor package
package resin
usage method
silane
Prior art date
Application number
PCT/US2012/045916
Other languages
French (fr)
Other versions
WO2013012587A2 (en
Inventor
Kohichiro Kawate
Hiroko AKIYAMA
Naota SUGIYAMA
Brant U. Kolb
Eric G. Larson
Original Assignee
3M Innovative Properties Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Company filed Critical 3M Innovative Properties Company
Priority to JP2014520234A priority Critical patent/JP6155261B2/en
Priority to US14/131,827 priority patent/US9230873B2/en
Priority to KR1020147003608A priority patent/KR20140058557A/en
Publication of WO2013012587A2 publication Critical patent/WO2013012587A2/en
Publication of WO2013012587A3 publication Critical patent/WO2013012587A3/en
Priority to US14/810,631 priority patent/US9773714B2/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/296Organo-silicon compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00Use of pretreated ingredients
    • C08K9/04Ingredients treated with organic substances
    • C08K9/06Ingredients treated with organic substances with silicon-containing compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92122Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin

Abstract

A semiconductor package resin composition of the present invention includes an epoxy resin, a curing agent, inorganic particles, nano-particles surface treated with a silane that contains a photopolymerizable functional group, and a photopolymerization initiator.
PCT/US2012/045916 2011-07-15 2012-07-09 Semiconductor package resin composition and usage method thereof WO2013012587A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014520234A JP6155261B2 (en) 2011-07-15 2012-07-09 Semiconductor package resin composition and method of using the same
US14/131,827 US9230873B2 (en) 2011-07-15 2012-07-09 Semiconductor package resin composition and usage method thereof
KR1020147003608A KR20140058557A (en) 2011-07-15 2012-07-09 Semiconductor package resin composition and usage method thereof
US14/810,631 US9773714B2 (en) 2011-07-15 2015-07-28 Semiconductor package resin composition and usage method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161508344P 2011-07-15 2011-07-15
US61/508,344 2011-07-15

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/131,827 A-371-Of-International US9230873B2 (en) 2011-07-15 2012-07-09 Semiconductor package resin composition and usage method thereof
US14/810,631 Continuation US9773714B2 (en) 2011-07-15 2015-07-28 Semiconductor package resin composition and usage method thereof

Publications (2)

Publication Number Publication Date
WO2013012587A2 WO2013012587A2 (en) 2013-01-24
WO2013012587A3 true WO2013012587A3 (en) 2013-04-18

Family

ID=47558664

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/045916 WO2013012587A2 (en) 2011-07-15 2012-07-09 Semiconductor package resin composition and usage method thereof

Country Status (5)

Country Link
US (2) US9230873B2 (en)
JP (2) JP6155261B2 (en)
KR (1) KR20140058557A (en)
TW (1) TWI550018B (en)
WO (1) WO2013012587A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103562317A (en) * 2011-03-28 2014-02-05 3M创新有限公司 Curable composition, article, method of curing, and reaction product
JP6271164B2 (en) * 2013-06-17 2018-01-31 日立オートモティブシステムズ株式会社 Box-type in-vehicle controller
WO2015102978A1 (en) * 2014-01-02 2015-07-09 Henkel IP & Holding GmbH Film containing nano-particulate filler
US9220183B1 (en) * 2014-07-16 2015-12-22 International Business Machines Corporation Devices employing semiconductor die having hydrophobic coatings, and related cooling methods
JP6872313B2 (en) * 2015-10-13 2021-05-19 リンテック株式会社 Semiconductor devices and composite sheets
US20190031790A1 (en) * 2016-01-12 2019-01-31 Hitachi Chemical Company, Ltd. Photosensitive resin composition, dry film using same, printed wiring board, and method for manufacturing printed wiring board
JP7454906B2 (en) * 2016-10-14 2024-03-25 株式会社レゾナック Underfill material, electronic component device, and method for manufacturing electronic component device
US20210376203A1 (en) * 2018-02-19 2021-12-02 Signify Holding B.V. Sealed device with light engine
JP7109940B2 (en) * 2018-03-08 2022-08-01 日東電工株式会社 Sealing adhesive sheet

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030129421A1 (en) * 2001-10-09 2003-07-10 Mitsubishi Chemical Corporation Active energy ray-curable antistatic coating composition
EP1595919A1 (en) * 2004-05-13 2005-11-16 Nitto Denko Corporation Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same
US20060147719A1 (en) * 2002-11-22 2006-07-06 Slawomir Rubinsztajn Curable composition, underfill, and method
JP2008297373A (en) * 2007-05-29 2008-12-11 Somar Corp Underfill material comprising liquid epoxy resin composition, and flip chip type semiconductor device
US20090140284A1 (en) * 2005-10-28 2009-06-04 Sumitomo Osaka Cement Co., Ltd. Transparent Inorganic Oxide Dispersion and Iorganic Oxide Particle-Containing Resin Composition, Composition for Sealing Light Emitting Element and Light Emitting element, Hard Coat Film and Optical Functional Film and Optical Component, and Method for Producing Inorganic Oxide Pariticle-Containing Resin
KR20100098320A (en) * 2009-02-27 2010-09-06 주식회사 엘지화학 Coating composition and coating film having enhanced abrasion resistance and contamination resistance

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228681B1 (en) 1999-03-10 2001-05-08 Fry's Metals, Inc. Flip chip having integral mask and underfill providing two-stage bump formation
US6245595B1 (en) 1999-07-22 2001-06-12 National Semiconductor Corporation Techniques for wafer level molding of underfill encapsulant
US6281046B1 (en) 2000-04-25 2001-08-28 Atmel Corporation Method of forming an integrated circuit package at a wafer level
US6573122B2 (en) 2001-03-28 2003-06-03 International Rectifier Corporation Wafer level insulation underfill for die attach
US6794761B2 (en) 2001-04-26 2004-09-21 Intel Corporation No-flow underfill material
US20030111519A1 (en) 2001-09-04 2003-06-19 3M Innovative Properties Company Fluxing compositions
US20030162911A1 (en) 2002-01-31 2003-08-28 Yue Xiao No flow underfill composition
US20060194064A1 (en) 2002-03-01 2006-08-31 Xiao Allison Y Underfill encapsulant for wafer packaging and method for its application
US20040101688A1 (en) 2002-11-22 2004-05-27 Slawomir Rubinsztajn Curable epoxy compositions, methods and articles made therefrom
US7022410B2 (en) 2003-12-16 2006-04-04 General Electric Company Combinations of resin compositions and methods of use thereof
JP2008180992A (en) * 2007-01-25 2008-08-07 Hitachi Chem Co Ltd Photosensitive resin composition, photosensitive film for permanent resist, resist pattern forming method, printed wiring board and semiconductor package
CN101657891A (en) 2007-03-13 2010-02-24 洛德公司 Convex die attachment method
JP5004351B2 (en) 2007-11-30 2012-08-22 信越化学工業株式会社 Manufacturing method of semiconductor device
BRPI1014911A2 (en) * 2009-05-26 2016-07-26 3M Innovative Proferties Company process for manufacturing loaded resins

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030129421A1 (en) * 2001-10-09 2003-07-10 Mitsubishi Chemical Corporation Active energy ray-curable antistatic coating composition
US20060147719A1 (en) * 2002-11-22 2006-07-06 Slawomir Rubinsztajn Curable composition, underfill, and method
EP1595919A1 (en) * 2004-05-13 2005-11-16 Nitto Denko Corporation Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same
US20090140284A1 (en) * 2005-10-28 2009-06-04 Sumitomo Osaka Cement Co., Ltd. Transparent Inorganic Oxide Dispersion and Iorganic Oxide Particle-Containing Resin Composition, Composition for Sealing Light Emitting Element and Light Emitting element, Hard Coat Film and Optical Functional Film and Optical Component, and Method for Producing Inorganic Oxide Pariticle-Containing Resin
JP2008297373A (en) * 2007-05-29 2008-12-11 Somar Corp Underfill material comprising liquid epoxy resin composition, and flip chip type semiconductor device
KR20100098320A (en) * 2009-02-27 2010-09-06 주식회사 엘지화학 Coating composition and coating film having enhanced abrasion resistance and contamination resistance

Also Published As

Publication number Publication date
JP6155261B2 (en) 2017-06-28
US20140217622A1 (en) 2014-08-07
KR20140058557A (en) 2014-05-14
JP2014524957A (en) 2014-09-25
TW201311806A (en) 2013-03-16
US9773714B2 (en) 2017-09-26
US9230873B2 (en) 2016-01-05
TWI550018B (en) 2016-09-21
JP2017133023A (en) 2017-08-03
US20150329740A1 (en) 2015-11-19
WO2013012587A2 (en) 2013-01-24

Similar Documents

Publication Publication Date Title
WO2013012587A3 (en) Semiconductor package resin composition and usage method thereof
TWI560225B (en) Underlayer composition for imprints and method for manufacturing pattern by using the same,cured object,laminate body,semiconductor device and method for manufacturing the same,and adhesive enhance agent for curable composition and substrate
EP2730603A4 (en) Compound comprising isocyanuric skeleton, epoxy groups, and organopolysiloxane or silsesquioxane skeleton having sih groups, thermosetting resin composition comprising compound as agent for imparting adhesion, cured product, and sealing member for optical semiconductor
EP3441385A4 (en) Amine compound, amine composition, and epoxy resin curing agent
EP2410001A4 (en) Inclusion complex, curing agent, cure accelerator, epoxy resin composition, and epoxy resin composition for encapsulation of semiconductor
SG10201506094PA (en) Functional Particle, Functional Particle Group, Filler, Resin Composition for Electronic Component, Electronic Component and Semiconductor Device
EP2392603A4 (en) Epoxy resin composition, curing agent, and curing accelerator
EP2857457A4 (en) Curable resin composition, and cured product, sealing agent, and optical semiconductor device using same
EP2581417A4 (en) Silicon-containing curable composition, cured product of the silicon-containing curable composition and lead frame substrate formed of the silicon-containing curable composition
WO2012026757A3 (en) Phosphor film, method for manufacturing same, method for depositing a phosphor layer, method for manufacturing a light-emitting device package, and light-emitting device package
EP2653922A4 (en) Positive photoresist composition, coating film thereof, and novolac phenol resin
WO2013086348A3 (en) Adhesive material
CL2013001035A1 (en) Aqueous coating compositions comprising an aqueous vehicle, a resin component and one or more clay anti-slip agents; coating system; coated article; and method of coating a surface.
EP2604639A4 (en) Resin composition, cured resin product, wiring board, and manufacturing method for wiring board
MY185884A (en) Epoxy resin composition, semiconductor sealing agent, and semiconductor device
SG11201501594UA (en) Positive photosensitive resin composition, and method for producing semiconductor device containing a cured film using said composition
EP2669310A4 (en) Epoxy resin, curable resin composition and cured product thereof, and printed wiring substrate
MY176228A (en) Epoxy resin composition, semiconductor sealing agent, and semiconductor device
HK1177945A1 (en) Heat-curable powder coating compositions, which after the coating has cured result in a matt surface and simple method for producing same
EP2754692A4 (en) Resin particle aggregate, method for manufacturing same and application of same
PH12014501165A1 (en) Resin composition, resin composition sheet, semiconductor device and method for manufacturing same
MY155689A (en) Resin composition for encapsulating semiconductor and semiconductor device
EP2784808B8 (en) Electrical component resin, semiconductor device, and substrate
WO2013012252A3 (en) Composition having superior fingerprint resistance for glare prevention coating and glare prevention film manufactured using same
SG11201502291VA (en) Resin composition, cured film, laminated film, and method for manufacturing semiconductor device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12815036

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2014520234

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20147003608

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 14131827

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 12815036

Country of ref document: EP

Kind code of ref document: A2